1
Publication date: March 2004
SKL00007BED
PIN diodes
MA27P01
Silicon epitaxial planar type
For high frequency switch
■
Features
•
Small terminal capacitance C
t
•
Small forward dynamic resistance r
f
•
Ultraminiature package and surface mounting type
1.0 mm
×
0.6 mm (height: 0.52 mm)
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
60
V
Forward current
I
F
100
mA
Power dissipation
*
P
D
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Marking Symbol: N
1: Anode
2: Cathode
SSSMini2-F2 Package
5
°
5
°
0.27
2
1
1.40
±0.05
0.52
±0.03
1.00
±0.05
0.60
±0.05
0.15 min.
0 to 0.01
0.15 min.
0.15 max.
+0.05
–0.02
0.13
+0.05
–0.02
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
10 mA
1.0
V
Reverse current
I
R
V
R
=
60 V
100
nA
Terminal capacitance
C
t
V
R
=
1 V, f
=
1 MHz
0.8
pF
Forward dynamic resistance
*
r
f
I
F
=
10 mA, f
=
100 MHz
1.0
Ω
■
Electrical Characteristics
T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *: r
f
measurement device ; agilent model 4291B
Note) *: With a glass epoxy PC board
This product complies with the RoHS Directive (EU 2002/95/EC).
