Publication date: May
2005
SKL
00020
AED
1
PIN diodes
MA26P07
Silicon epitaxial planar type
For high frequency switch
Features
Small terminal capacitance C
t
Low forward dynamic resistance r
f
Low forward dynamic resistance r
Low forward dynamic resistance r
Miniature package and surface mounting type
Absolute Maximum Ratings
T
a
=
25
aa
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
60
V
Forward current
I
F
100
mA
Junction temperature
T
j
TT
150
°
C
Storage temperature
T
stg
TT
–
55
to +
150
°
C
Electrical Characteristics
T
a
=
25
aa
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
V
V
I
F
=
10
mA
1
.
0
V
Reverse current
I
R
V
R
=
60
V
R
R
100
nA
Terminal capacitance
C
t
V
R
=
1
V, f =
1
MHz
R
R
0
.
35
pF
Forward dynamic resistance
r
f
rr
I
F
=
10
mA, f =
100
MHz
1
.
5
Ω
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7031
measuring methods for diodes.
Marking Symbol: P
4
Unit: mm
1: Anode
2: Cathode
ML-2-N1 Package
0.60
±0.05
1.00
±0.05
1
2
0.39
+0.01
−
0.03
0.25
±0.05
0.25
±0.05
0.50
±0.05
0.65
±0.01
1
0.05
±0.03
0.05
±0.03
2
0.01
±0.005
This product complies with the RoHS Directive (EU 2002/95/EC).