Schottky Barrier Diodes (SBD)
Publication date: March 2007
SKH00160AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA24D54
Silicon epitaxial planar type
For recti
fi
cation
Features
Forward current (Average) I
F(AV)
= 3.0 A rectification is possible
Small reverse current I
R
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
30
V
Maximum peak reverse voltage
V
RM
30
V
Forward current (Average)
*
I
F(AV)
3.0
A
Non-repetitive peak forward surge
current
I
FSM
60
A
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
–40 to +150
°
C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward current
V
F
I
F
= 3.0 A
0.37
V
Reverse current
I
R
V
R
= 30 V
2.0
mA
Terminal capacitance
C
t
V
R
= 10 V, f = 1 MHz
125
pF
Reverse recovery time
*1
t
rr
I
F
= I
R
= 100 mA, I
rr
= 10 mA
R
L
= 100
W
40
ns
Thermal resistance
R
th(j-a)
*2
55
°
C/W
R
th(j-a)
*3
210
R
th(j-l)
10
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *1: t
rr
test Circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
I
R
=
100 mA
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
*2: Mounted on an alumina PC board (board: 50 mm
×
50 mm
×
0.8 t, soldering land: 1.4 mm
×
2.1 mm)
*3: With a glass epoxy PC board (board: 50 mm
×
20 mm
×
1.0 t, soldering land: 2.0 mm
×
2.0 mm + 20 mm
×
0.8 mm)
Unit: mm
1: Anode
2: Cathode
TMiniP2-F1 Package
2.40
±
0.10
0.15
±
0.05
1
2
1.75
±
0.05
4.7
0
±
0.10
3.80
±
0.05
0.450
±
0.05
5
°
0 to 0.40
0 to 0.0
3
0.90 max.
5
°
Marking Symbol: 4S
