Schottky Barrier Diodes (SBD)
Publication date: September
2006
SKH
00154
AED
1
This product complies with the RoHS Directive (EU
2002
/
95
/EC).
MA24D51
Silicon epitaxial planar type
For rectifi cation
Features
Allowing low-profi le mounting
Forward current (Average) I
F(AV)
=
3
A rectifi cation is possible
Low forward voltage V
F
Low forward voltage V
Low forward voltage V
Absolute Maximum Ratings
T
a
=
25
aa
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
40
V
Maximum peak reverse voltage
V
RM
V
V
40
V
Forward current (Average)
*
1
I
F(AV)
3
.
0
A
Non-repetitive peak forward surge current
*
2
I
FSM
60
A
Junction temperature
T
j
TT
150
°
C
Storage temperature
T
stg
TT
–
40
to +
150
°
C
Note) *
1
: Mounted on an alumina PC board
*
2
:
50
Hz sine wave
1
cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
=
25
aa
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
V
V
I
F
=
3
.
0
A
0
.
37
0
.
42
V
Reverse current
I
R
V
R
=
40
V
R
R
2
mA
Thermal resistance (j-a)
*
R
th(j-a)
R
R
60
°
C/W
Thermal resistance (j-l)
R
th(j-l)
R
R
10
°
C/W
Note)
1
. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7031
measuring methods for diodes.
2
. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3
. *: Mounted on an alumina PC board
Unit: mm
1: Anode
2: Cathode
TMiniP2-F1 Package
2.40
±
0.10
0.15
±
0.05
1
2
1.75
±
0.05
4.70
±
0.10
3.80
±
0.05
0.450
±
0.05
5
°
0 to 0.40
0 to 0.0
3
0.90MAX
5
°
Marking Symbol:
5
S
