SHC00037CED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: October 2008
1
Infrared Light Emitting Diodes
LNA4905L
GaAlAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency: P
O
= 15 mW (min.)
Fast response and high-speed modulation capability: f
C
= 30 MHz (typ.)
Transparent epoxy resin package
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Power dissipation
P
D
190
mW
Forward current
I
F
100
mA
Pulse forward current
*
I
FP
1
A
Reverse voltage
V
R
3
V
Operating ambient temperature
T
opr
–25 to +85
°
C
Storage temperature
T
stg
–30 to +100
°
C
Note) *: f = 100 Hz, Duty cycle = 0.1%
Electrical-Optical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Radiant power
P
O
I
F
= 50 mA
15
mW
Reverse current
I
R
V
R
= 3 V
10
µA
Forward voltage
V
F
I
F
= 100 mA
1.7
2.1
V
Peak emission wavelength
λ
P
I
F
= 50 mA
880
nm
Spectral half band width
Δλ
I
F
= 50 mA
50
nm
Half-power angle
θ
The angle when the radiant power is halved.
15
°
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Cutoff frequency: 30 MHz
f
C
: 10
×
log
P
O
at f = f
C
=
−
3
P
O
at f = 1 MHz
3. A light detection element uses a silicon diode have proofread a load with a standard device.
4. LED might radiate red light under large current drive.
