ESD Diodes
1
Publication date: March 2004
SKE00010CED
Note) *: P
D
= 200 mW achieved with a printed circuit board.
MAZE062D
Silicon planar type
For surge absorption circuit
■
Features
•
Low joint capacity zener diode
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Repetitive peak forward current
I
FRM
200
mA
Power dissipation
*
P
D
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Internal connection
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
10 mA
0.9
1.0
V
Zener voltage
*
V
Z
I
Z
=
5 mA
5.9
6.5
V
Zener rise operating resistance
R
ZK
I
Z
=
0.5 mA
100
Ω
Zener operating resistance
R
Z
I
Z
=
5 mA
30
Ω
Reverse current
I
R
V
R
=
5.5 V
3
µ
A
Terminal capacitance
C
t
V
R
=
0 V, f
=
1 MHz
8
pF
■
Electrical Characteristics
T
a
= 25°C
±
3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. Electrostatic breakdown voltage:
±
15 kV
Test method: IEC-801 (C = 150 pF, R = 330
Ω
, Contact discharge: 10 times)
Test unit: ESS-200AX
4. *: The V
Z
value is for the temperature of 25
°
C. In other cases, carry out the temperature compensation.
Guaranteed at 20 ms after power application.
0.3
2.0
±
0.2
1.3
±
0.1
(0.65)
1
3
2
(0.65)
0.9
±
0.1
2.1
±
0.1
1.25
±
0.1
0 to 0.1
(0.15)
(0.425)
5˚
5˚
+0.1
–0
0.15
+0.1
–0.05
1
2
3
Marking Symbol: 6.2C
1: Cathode 1
2: Cathode 2
3: Anode
EIAJ: SC-79
SMini3-F1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
