Panasonic 2SD1823G, Техническое описание

Страница: 1 / 4

Transistors
1 Publication date: May 2007 SJC00375AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1823G
Silicon NPN epitaxial planar type
For low-frequency amplification
■
Features
•
High forward current transfer ratio h
FE
•
Low collector-emitter saturation voltage V
CE(sat)
•
High emitter-base voltage (Collector open) V
EBO
•
Low noise voltage NV
•
S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■
Absolute Maximum Ratings T
a
=
25
°
C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
50 V
Collector-emitter voltage (Base open) V
CEO
40 V
Emitter-base voltage (Collector open) V
EBO
15 V
Collector current I
C
50 mA
Peak collector current I
CP
100 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150
°
C
Storage temperature T
stg
−
55 to
+
150
°
C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
=
10
µ
A, I
E
=
0 50 V
Collector-emitter voltage (Base open) V
CEO
I
C
=
1 mA, I
B
=
0 40 V
Emitter-base voltage (Collector open) V
EBO
I
E
=
10
µ
A, I
C
=
0 15 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
=
20 V, I
E
=
0 0.1
µ
A
Collector-emitter cutoff current (Base open) I
CEO
V
CE
=
20 V, I
B
=
0 1
µ
A
Forward current transfer ratio
*
h
FE
V
CE
= 10 V, I
C
= 2 mA 400 2 000

Collector-emitter saturation voltage V
CE(sat)
I
C
=
10 mA, I
B
=
1 mA 0.05 0.20 V
Transition frequency f
T
V
CB
=
10 V, I
E
= −
2 mA, f
=
200 MHz 120 MHz
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank R S T
h
FE
400 to 800 600 to 1 200 1 000 to 2 000
■
Package
•
Code
SMini3-F2
•
Marking Symbol: 1Z
•
Pin Name
1: Base
2: Emitter
3: Collector