Panasonic 2SD1821G, Техническое описание

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Transistors
1 Publication date: May 2007 SJC00374AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1821G
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
■
Features
•
High collector-emitter voltage (Base open) V
CEO
•
Low noise voltage NV
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■
Absolute Maximum Ratings T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R
h
FE
130 to 220 185 to 330
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
185 V
Collector-emitter voltage (Base open) V
CEO
185 V
Emitter-base voltage (Collector open) V
EBO
5 V
Collector current I
C
50 mA
Peak collector current I
CP
100 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150
°
C
Storage temperature T
stg
−
55 to
+
150
°
C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
=
100
µ
A, I
B
=
0 185 V
Emitter-base voltage (Collector open) V
EBO
I
E
=
10
µ
A, I
C
=
0 5 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
=
100 V, I
E
=
0 1
µ
A
Forward current transfer ratio
*
h
FE
V
CE
=
5 V, I
C
=
10 mA 130 330

Collector-emitter saturation voltage V
CE(sat)
I
C
=
30 mA, I
B
=
3 mA 1 V
Transition frequency f
T
V
CB
=
10 V, I
E
= −
10 mA, f
=
200 MHz 150 MHz
Collector output capacitance C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz 2.3 pF
(Common base, input open circuited)
Noise voltage NV V
CE
=
10 V, I
C
=
1 mA, G
V
=
80 dB 150 mV
R
g
= 100 k
Ω
, Function = FLAT
■
Package
•
Code
SMini3-F2
•
Marking Symbol: L
•
Pin Name
1: Base
2: Emitter
3: Collector