Transistors
Publication date : October 2008
SJC00424AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1820A
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1219A
Features
Low collector-emitter saturation voltage V
CE(sat)
S-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
500
mA
Peak collector current
I
CP
1
A
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
–55 to +150
°
C
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10
m
A, I
E
= 0
60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10
m
A, I
C
= 0
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 20 V, I
E
= 0
0.1
m
A
Forward current transfer ratio
*1
h
FE1
*2
V
CE
= 10 V, I
C
= 150 mA
85
340
h
FE2
V
CE
= 10 V, I
C
= 500 mA
40
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
= 300 mA, I
B
= 30 mA
0.35
0.60
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= –50 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
6
15
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classi
fi
cation
Rank
Q
R
S
No-rank
h
FE1
85 to 170
120 to 240
170 to 340
85 to 340
Marking symbol
XQ
XR
XS
X
Product of no-rank is not classi
fi
ed and have no marking symbol for rank.
Package
Code
SMini3-G1
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: X
