Transistors
Publication date: October 2008
SJC00414AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1478A
Silicon NPN epitaxial planar type darlington
For low frequency amplification
Features
Forward current transfer ratio h
FE
is designed high, which is appropriate to the
driver circuit of motors and printer hammer.
A shunt resistor is omitted from the driver.
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
500
mA
Peak collector current
I
CP
750
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
-55 to +150
°
C
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 100
m
A, I
E
= 0
60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 1 mA, I
B
= 0
50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 100
m
A, I
C
= 0
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 25 V, I
E
= 0
100
nA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 4 V, I
C
= 0
100
nA
Forward current transfer ratio
*1,
*2
h
FE
V
CE
= 10 V, I
C
= 500 mA
4 000
20 000
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
= 500 mA, I
B
= 0.5 mA
2.5
V
Base-emitter saturation voltage
*1
V
BE(sat)
I
C
= 500 mA, I
B
= 0.5 mA
3.0
V
Transition frequency
f
T
V
CB
= 10 V, I
E
=
-
50 mA, f = 200 MHz
200
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classi
fi
cation
Rank
Q
R
h
FE
4 000 to 10 000
8 000 to 20 000
Package
Code
Mini3-G1
Pin Name
1: Base
2: Emitter
3: Collector
Marking Symbol: 2O
Internal Connection
B
C
E
