Transistors
1
Publication date: February 2003
SJC00216BED
2SD1328
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
Low ON resistance R
on
•
High foward current transfer ratio h
FE
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
25
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
12
V
Collector current
I
C
0.5
A
Peak collector current
I
CP
1
A
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
µ
A, I
E
=
0
25
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
1 mA, I
B
=
0
20
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
10
µ
A, I
C
=
0
12
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
25 V, I
E
=
0
100
nA
Forward current transfer ratio
*1,2
h
FE
V
CE
=
2 V, I
C
=
0.5
A
200
800
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
=
0.5 A, I
B
=
20 mA
0.13
0.40
V
Base-emitter saturation voltage
*1
V
CE(sat)
I
C
=
0.5 A, I
B
=
50 mA
1.2
V
Transition frequency
f
T
V
CB
=
10 V, I
E
=
−
50 mA, f
=
200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
10
pF
ON resistance
*3
R
ON
1.0
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: 1D
Rank
R
S
T
No-rank
h
FE
200 to 350
300 to 500
400 to 800
200 to 800
Marking symbol
1DR
1DS
1DT
1D
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
*3: R
on
Measuremet circuit
V
V
1 k
Ω
R
on
=
V
B
×
1 000 (
Ω
)
V
A
−
V
B
f
=
1 kHz
V
=
0.3 V
V
B
I
B
=
1 mA
V
A
Product of no-rank is not classified and have no marking symbol for rank.
This product complies with the RoHS Directive (EU 2002/95/EC).
