Panasonic 2SC5848, Техническое описание

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Transistors
Publication date : December 2004 SJC 00327 AED
1
2SC5848
Silicon NPN epitaxial planar type
For general amplification
Complementary to
2 SA 2079

Features

High forward current transfer ratio h
FE

Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package
Package: 0 . 6 mm × 1 . 0 mm (hight 0 . 39 mm)

Absolute Maximum Ratings T
a
= 25 ° C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
60 V
Collector-emitter voltage (Base open) V
CEO
50 V
Emitter-base voltage (Collector open) V
EBO
7 V
Collector current I
C
100 mA
Peak collector current I
CP
200 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
125 ° C
Storage temperature T
stg
– 55 to + 125 ° C

Electrical Characteristics T
a
= 25 ° C ± 3 ° C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µ A, I
E
= 0 60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 0 50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µ A, I
C
= 0 7 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 20 V, I
E
= 0 0 . 1 µ A
Collector-emitter cut-off current (Base open) I
CEO
V
CE
= 10 V, I
B
= 0 100 µ A
Forward current transfer ratio h
FE
V
CE
= 10 V, I
C
= 2 mA 180 390 
Collector-emitter saturation voltage V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA 0 . 1 0 . 3 V
Transition frequency f
T
V
CB
= 10 V, I
E
= – 2 mA, f = 200 MHz 100 MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= 10 V, I
E
= 0 , f = 1 MHz 2 . 2 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collector ML3-N2 Package
0.60
±
0.0
5
1.00
± 0.05
2
1
3
0.39
+ 0.01
− 0.03
0.25
± 0.05
0.25
± 0.05
0.5
0
±
0.05
0.65
± 0.01
0.15
±
0.0
5
2
1
0.35
±
0.0
1
0.05
± 0.03
0.0
5
±
0.0
3
3
Marking Symbol : 3 E
This product complies with the RoHS Directive (EU 2002/95/EC).