Transistors
1
Publication date: December 2002
SJC00283BED
2SC5295J
Silicon NPN epitaxial planar type
For 2 GHz band low-noise amplification
■
Features
•
High transition frequency f
T
•
Low collector output capacitance (Common base, input open cir-
cuited) C
ob
•
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
10 V, I
E
=
0
1
µ
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
=
1 V, I
C
=
0
1
µ
A
Forward current transfer ratio
*
h
FE
V
CE
=
8 V, I
C
=
20 mA
50
170
Transition frequency
f
T
V
CE
=
8 V, I
C
=
15 mA, f
=
1.5 GHz
7.0
8.5
GHz
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
0.6
1.0
pF
(Common base, input open circuited)
Foward transfer gain
S
21e
2
V
CE
=
8 V, I
C
=
15 mA, f
=
1.5 GHz
7
9
dB
Maximum unilateral power gain
G
UM
V
CE
=
8 V, I
C
=
15 mA, f
=
1.5 GHz
10
dB
Noise figure
NF
V
CE
=
8 V, I
C
=
7 mA, f
=
1.5 GHz
2.2
3.0
dB
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
10
V
Emitter-base voltage (Collector open)
V
EBO
2
V
Collector current
I
C
65
mA
Collector power dissipation
P
C
125
mW
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
Marking Symbol: 3S
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
h
FE
50 to 120
100 to 170
0.27
±
0.02
3
1
2
0.12
+0.03
–0.01
0.80
±
0.05
(0.80)
0.85
1.60
±
0.05
0 to 0.02
0.10 max.
0.70
+0.05 –0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00
±
0.05
(0.50)(0.50)
+0.05 –0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
