Transistors
1
Publication date: May 2007
SJC00395AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4808G
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■
Features
•
Low noise figure NF
•
High forward transfer gain
S
21e
2
•
High transition frequency f
T
•
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
µ
A, I
E
=
0
15
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
100
µ
A, I
B
=
0
10
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
10 V, I
E
=
0
1
µ
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
=
2 V, I
C
=
0
1
µ
A
Forward current transfer ratio
*
h
FE
V
CE
=
8 V, I
C
=
20 mA
50
150
300
Transition frequency
f
T
V
CE
=
8 V, I
C
=
15 mA, f
=
0.8 GHz
5
6
GHz
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
0.7
1.2
pF
(Common base, input open circuited)
Forward transfer gain
S
21e
2
V
CE
=
8 V, I
C
=
15 mA, f
=
0.8 GHz
11
14
dB
Maximum unilateral power gain
G
UM
V
CE
=
8 V, I
C
=
15 mA, f
=
0.8 GHz
15
dB
Noise figure
NF
V
CE
=
8 V, I
C
=
7 mA, f
=
0.8 GHz
1.3
2.0
dB
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
10
V
Emitter-base voltage (Collector open)
V
EBO
2
V
Collector current
I
C
80
mA
Collector power dissipation
P
C
125
mW
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
■
Package
•
Code
SSMini3-F3
•
Marking Symbol: 3M
•
Pin Name
1. Base
2. Emitter
3. Collector
