Transistors
1
Publication date: February 2004
SJC00136CED
2SC3757
Silicon NPN epitaxial planar type
For high-speed switching
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine
packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
15 V, I
E
=
0
0.1
µ
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
=
4 V, I
C
=
0
0.1
µ
A
Forward current transfer ratio
*
h
FE
V
CE
=
1 V, I
C
=
10 mA
60
200
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
10 mA, I
B
=
1 mA
0.17
0.25
V
Base-emitter saturation voltage
V
BE(sat)
I
C
=
10 mA, I
B
=
1 mA
1.0
V
Transition frequency
f
T
V
CB
=
10 V, I
E
=
−
10 mA, f
=
200 MHz
450
MHz
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
2
6
pF
(Common base, input open circuited)
Turn-on time
t
on
Refer to the switching time measurement
17
ns
Turn-off time
t
off
circuit
17
ns
Storage time
t
stg
10
ns
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
40
V
Collector-emitter voltage (E-B short)
V
CES
40
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
100
mA
Peak collector current
I
CP
300
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Marking Symbol: 2Y
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Rank
Q
R
h
FE
60 to 120
90 to 200
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).
