Panasonic 2SC3312, Техническое описание, Страница: 1 / 3

Transistors
1 Publication date: March 2003 SJC00128BED
2SC3312
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1310
■
Features
•
Optimum for high-density mounting
•
Allowing supply with the radial taping
•
Low noise voltage NV
■
Absolute Maximum Ratings T
a
=
25
°
C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
60 V
Collector-emitter voltage (Base open) V
CEO
55 V
Emitter-base voltage (Collector open) V
EBO
7 V
Collector current I
C
100 mA
Peak collector current I
CP
200 mA
Collector power dissipation P
C
300 mW
Junction temperature T
j
150
°
C
Storage temperature T
stg
−
55 to
+
150
°
C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
=
10
µ
A, I
E
=
0 60 V
Collector-emitter voltage (Base open) V
CEO
I
C
=
2 mA, I
B
=
0 55 V
Emitter-base voltage (Collector open) V
EBO
I
E
=
10
µ
A, I
C
=
0 7 V
Base-emitter voltage V
BE
V
CE
=
1 V, I
C
=
30 mA 1 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
=
20 V, I
E
=
0 0.1
µ
A
Collector-emitter cutoff current (Base open) I
CEO
V
CE
=
20 V, I
B
=
0 1
µ
A
Forward current transfer ratio
*
h
FE
V
CE
=
5 V, I
C
=
2 mA 180 700

Collector-emitter saturation voltage V
CE(sat)
I
C
=
100 mA, I
B
=
10 mA 1 V
Transition frequency f
T
V
CB
=
5 V, I
E
= −
2 mA, f
=
200 MHz 200 MHz
Noise voltage NV V
CE
=
10 V, I
C
=
1 mA, G
V
=
80 dB 150 mV
R
g
=
100 k
Ω
, Function
=
FLAT
■
Electrical Characteristics T
a
=
25
°
C
±
3
°
C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank R S T
h
FE
180 to 360 260 to 520 360 to 700
4.0 ±
0.2
0.75 max.
2.0 ±
0.2
0.45
(2.5) (2.5)
0.7 ±
0.1
2 3 1
+0.20
–0.10
0.45
+0.20
–0.10
7.6
3.0
±
0.2
(0.8)
(0.8)
15.6
±
0.5
1: Emitter
2: Collector
3: Base
NS-B1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).