Transistors
1
Publication date: February 2003
SJC00125BED
2SC3130
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■
Features
•
High transition frequency f
T
•
Small collector output capacitance (Common base, input open cir-
cuited) C
ob
and reverse transfer capacitance (Common emitter) C
rb
•
Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine pack-
ing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
10
V
Emitter-base voltage (Collector open)
V
EBO
3
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
2 mA, I
B
=
0
10
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
10
µ
A, I
C
=
0
3
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
10 V, I
E
=
0
1
µ
A
Forward current transfer ratio
*1
h
FE
V
CE
=
4 V, I
C
=
5 mA
75
220
h
FE
ratio
*2
∆
h
FE
h
FE2
: V
CE
=
4 V, I
C
=
100
µ
A
0.75
1.60
h
FE1
: V
CE
=
4 V, I
C
=
5 mA
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
20 mA, I
B
=
4 mA
0.5
V
Transition frequency
f
T
V
CB
=
4 V, I
E
=
−
5 mA, f
=
200 MHz
1.4
1.9
2.5
GHz
Collector output capacitance
C
ob
V
CB
=
4 V, I
E
=
0, f
=
1 MHz
1.4
pF
(Common base, input open circuited)
Reverse transfer capacitance
C
rb
V
CB
=
4 V, I
E
=
0, f
=
1 MHz
0.45
pF
(Common emitter)
Collector-base parameter
r
bb
' • C
C
V
CB
=
4 V, I
E
=
−
5 mA, f
=
31.9 MHz
11
ps
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Rank
P
Q
h
FE
75 to 130
110 to 220
Marking Symbol: 1S
*2:
∆
h
FE
=
h
FE2
/
h
FE1
This product complies with the RoHS Directive (EU 2002/95/EC).
