Transistors
1
Publication date: March 2003
SJC00119BED
2SC2634
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1127
■
Features
•
Low noise voltage NV
•
High forward current transfer ratio h
FE
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
V
Collector-emitter voltage (Base open)
V
CEO
55
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector current
I
C
100
mA
Peak collector current
I
CP
200
mA
Collector power dissipation
P
C
400
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
µ
A, I
E
=
0
60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
1 mA, I
B
=
0
55
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
10
µ
A, I
C
=
0
7
V
Base-emitter voltage
V
BE
V
CE
=
1 V, I
C
=
30 mA
1
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
10 V, I
E
=
0
1
100
nA
Collector-emitter cutoffcurrent (Base open)
I
CEO
V
CE
=
10 V, I
B
=
0
0.01
1.00
µ
A
Forward current transfer ratio
*
h
FE
V
CE
=
5 V, I
C
=
2 mA
180
700
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
100 mA, I
B
=
10 mA
0.6
V
Transition frequency
f
T
V
CB
=
5 V, I
E
=
−
2 mA, f
=
200 MHz
200
MHz
Noise voltage
NV
V
CE
=
10 V, I
C
=
1 mA, G
V
=
80 dB
150
mV
R
g
=
100 k
Ω
, Function
=
FLAT
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
5.0
±
0.2
0.7
±
0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
1
2 3
+0.6
–0.2
4.0
±
0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
T
h
FE
180 to 360
260 to 520
360 to 700
This product complies with the RoHS Directive (EU 2002/95/EC).
