Transistors
Publication date : October 2008
SJC00422AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2406
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1035
Features
Low noise voltage NV
High forward current transfer ratio h
FE
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
55
V
Collector-emitter voltage (Base open)
V
CEO
55
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
50
mA
Peak collector current
I
CP
100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
–55 to +150
°
C
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10
m
A, I
E
= 0
55
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
55
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10
m
A, I
C
= 0
5
V
Base-emitter voltage
V
BE
V
CE
= 1 V, I
C
= 100 mA
0.7
1.0
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0
0.1
m
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CB
= 10 V, I
B
= 0
1
m
A
Forward current transfer ratio
*
h
FE
V
CE
= 5 V, I
C
= 2 mA
180
700
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA
0.6
V
Transition frequency
f
T
V
CB
= 5 V, I
E
= –2 mA, f = 200 MHz
200
MHz
Noise voltage
NV
V
CB
= 10 V, I
C
= 1 mA, G
V
= 80 dB,
R
g
= 100 k
Ω
, Function = FLAT
110
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classi
fi
cation
Rank
R
S
T
h
FE
180 to 360
260 to 520
360 to 700
Merking symbol
TR
TS
TT
Package
Code
Mini3-G1
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: T
