Panasonic 2SB1679, Техническое описание

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Transistors
1 Publication date: February 2003 SJC00097BED
2SB1679
Silicon PNP epitaxial planar type
For low-frequency amplification
■
Features
•
Large collector output capacitance (Common base, input open cir-
cuited) C
ob
•
Low collector-emitter saturation voltage V
CE(sat)
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■
Absolute Maximum Ratings T
a
=
25
°
C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−
15 V
Collector-emitter voltage (Base open) V
CEO
−
10 V
Emitter-base voltage (Collector open) V
EBO
−
7 V
Collector current I
C
−
0.5 A
Peak collector current I
CP
−
1 A
Collector power dissipation P
C
150 mW
Junction temperature T
j
150
°
C
Storage temperature T
stg
−
55 to
+
150
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank R S
h
FE1
130 to 220 180 to 350
Marking Symbol: 3V
2.1
±0.1
1.3
±0.1
0.3
+0.1
–0.0
2.0
±0.2
1.25
±0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±0.1
0.9
±0.1
0 to 0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5
°
10
°
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= −
10
µ
A, I
E
=
0
−
15 V
Collector-emitter voltage (Base open) V
CEO
I
C
= −
1 mA, I
B
=
0
−
10 V
Emitter-base voltage (Collector open) V
EBO
I
E
= −
10
µ
A, I
C
=
0
−
7 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −
10 V, I
E
=
0
−
100 nA
Forward current transfer ratio
*1
h
FE1
*2
V
CE
= −
2 V, I
C
= −
0.5 A 130 350

h
FE2
V
CE
= −
2 V, I
C
= −
1 A 60
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
= −
0.4 A, I
B
= −
8 mA
−
0.16
−
0.30 V
Base-emitter saturation voltage
*1
V
BE(sat)
I
C
= −
0.4 A, I
B
= −
8 mA
−
0.8
−
1.2 V
Transition frequency f
T
V
CB
= −
10 V, I
E
=
50 mA, f
=
200 MHz 130 MHz
Collector output capacitance C
ob
V
CB
= −
10 V, I
E
=
0, f
=
1 MHz 22 pF
(Common base, input open circuited)
This product complies with the RoHS Directive (EU 2002/95/EC).