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Transistors

1

Publication date: March 2003

SJC00079BED

2SB1321A

Silicon PNP epitaxial planar type

For low-frequency output amplification and driver amplification

Complementary to 2SD1992A

Features

Allowing supply with the radial taping

Large collector power dissipation P

C

 (600 mW)

Absolute Maximum Ratings  

T

a

 

=

 25

°

C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

60

V

Collector-emitter voltage (Base open)

V

CEO

50

V

Emitter-base voltage (Collector open)

V

EBO

7

V

Collector current

I

C

 0.5

A

Peak collector current

I

CP

1

A

Collector power dissipation

P

C

600

mW

Junction temperature

T

j

150

°

C

Storage temperature

T

stg

55 to

 +

150

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

 

=

 

10 

µ

A, I

E

 

=

 0

60

V

Collector-emitter voltage (Base open)

V

CEO

I

C

 

=

 

2 mA, I

B

 

=

 0

50

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 

=

 

10 

µ

A, I

C

 

=

 0

7

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 

=

 

20 V, I

E

 

=

 0

 0.1

µ

A

Collector-emitter cutoff current (Base open)

I

CEO

V

CE

 

=

 

20 V, I

B

 

=

 0

1

µ

A

Forward current transfer ratio

h

FE1

 

*2

V

CE

 

=

 

10 V, I

C

 

=

 

10 mA

85

340

h

FE2

 

*1

V

CE

 

=

 

10 V, I

C

 

=

 

500 mA

40

Collector-emitter saturation voltage

V

CE(sat)

I

C

 

=

 

300 mA, I

B

 

=

 

30 mA

 0.35

 0.60

V

Transition frequency

f

T

V

CB

 

=

 

10 V, I

E

 

=

 10 mA, f 

=

 200 MHz

200

MHz

Collector output capacitance

C

ob

V

CB

 

=

 

10 V, I

E

 

=

 0, f 

=

 1 MHz

6

15

pF

(Common base, input open circuited)

Electrical Characteristics  

T

a

 

=

 25

°

±

 3

°

C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

*2: Rank classification

Rank

Q

R

S

No-rank

h

FE1

85 to 170

120 to 240

170 to 340

85 to 340

Product of no-rank is not classified and have no marking symbol for rank.

6.9

±

0.1

2.5

±

0.1

0.45

1.05

±

0.05

2.5

±

0.5

1

2

3

2.5

±0.5

+0.10

–0.05

0.45

+0.10

–0.05

(0.8)

(0.8)

(1.0)

(0.85)

3.5

±

0.1

14.5

±

0.5

(0.7)

(4.0)

0.65 max.

Unit: mm

1: Emitter
2: Collector
3: Base

MT-1-A1 Package

This product complies with the RoHS Directive (EU 2002/95/EC).

Содержание 2SB1321A

Страница 1: ...10 µA IC 0 7 V Collector base cutoff current Emitter open ICBO VCB 20 V IE 0 0 1 µA Collector emitter cutoff current Base open ICEO VCE 20 V IB 0 1 µA Forward current transfer ratio hFE1 2 VCE 10 V IC 10 mA 85 340 hFE2 1 VCE 10 V IC 500 mA 40 Collector emitter saturation voltage VCE sat IC 300 mA IB 30 mA 0 35 0 60 V Transition frequency fT VCB 10 V IE 10 mA f 200 MHz 200 MHz Collector output capa...

Страница 2: ...or current IC A IC IB 10 0 01 0 01 0 1 0 1 1 10 100 1 10 Ta 25 C 75 C 25 C 0 01 0 1 Base emitter saturation voltage V BE sat V Collector current IC A IC IB 10 0 01 0 1 0 600 500 400 300 200 100 1 10 Ta 75 C 25 C 25 C Forward current transfer ratio h FE VCE 10 V 0 01 0 1 Collector current IC A 1 10 100 0 240 200 160 120 80 40 Transition frequency f T MHz Emitter current IE mA VCB 10 V Ta 25 C 0 1 2...

Страница 3: ...2SB1321A 3 SJC00079BED ICEO Ta 1 10 102 103 104 Ambient temperature Ta C 0 200 160 120 80 40 VCE 10 V I CEO T a I CEO T a 25 C This product complies with the RoHS Directive EU 2002 95 EC ...

Страница 4: ...ard applications intended 4 The products and product specifications described in this book are subject to change without notice for modification and or im provement At the final stage of your design purchasing or use of the products therefore ask for the most up to date Product Standards in advance to make sure that the latest specifications satisfy your requirements 5 When designing your equipmen...

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