Panasonic 2SB0710A, Техническое описание

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Transistors
Publication date: October 2008 SJC00413AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0710A
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD0602A

Features

Large collector current I
C

Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing

Absolute Maximum Ratings T
a
= 25 ° C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
- 60 V
Collector-emitter voltage (Base open) V
CEO
- 50 V
Emitter-base voltage (Collector open) V
EBO
- 5 V
Collector current I
C
- 0.5 A
Peak collector current I
CP
- 1 A
Collector power dissipation P
C
200 mW
Junction temperature T
j
150 ° C
Storage temperature T
stg
-55 to +150 ° C

Electrical Characteristics T
a
= 25 ° C ± 3 ° C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= - 10 m A, I
E
= 0 - 60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= - 10 mA, I
B
= 0 - 50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= - 10 m A, I
C
= 0
- 5
V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= - 20 V, I
E
= 0
- 0.1 m A
Forward current transfer ratio *1
h
FE1
*2 V
CE
= - 10 V, I
C
= - 150 mA 85 340 
h
FE2
V
CE
= - 10 V, I
C
= - 500 mA 40 
Collector-emitter saturation voltage *1 V
CE(sat)
I
C
= - 300 mA, I
B
= - 30 mA
- 0.35 - 0.60
V
Base-emitter saturation voltage *1 V
BE(sat)
I
C
= - 300 mA, I
B
= - 30 mA - 1.1 - 1.5 V
Transition frequency f
T
V
CB
= - 10 V, I
E
= 50 mA, f = 200 MHz 200 MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= - 10 V, I
E
= 0, f = 1 MHz 6 15 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classi fi cation
Rank Q R S No-rank
h
FE1
85 to 170 120 to 240 170 to 340 85 to 340
Marking symbol DQ DR DS D
Product of no-rank is not classi fi ed and have no indication for rank.

Package

Code
Mini3-G1

Pin Name
1: Base
2: Emitter
3: Collector

Marking Symbol: D