Transistors
1
Publication date: March 2003
SJC00016BED
2SA1309A
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC3311A
■
Features
•
High forward current transfer ratio h
FE
•
Allowing supply with the radial taping
•
Optimum for high-density mounting
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−
60
V
Collector-emitter voltage (Base open)
V
CEO
−
50
V
Emitter-base voltage (Collector open)
V
EBO
−
7
V
Collector current
I
C
−
100
mA
Peak collector current
I
CP
−
200
mA
Collector power dissipation
P
C
300
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
−
10
µ
A, I
E
=
0
−
60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
−
2 mA, I
B
=
0
−
50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
−
10
µ
A, I
C
=
0
−
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
−
10 V, I
E
=
0
−
100
nA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
=
−
10 V, I
B
=
0
−
1
µ
A
Forward current transfer ratio
*
h
FE
V
CE
=
−
10 V, I
C
=
−
2 mA
160
460
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
−
50 mA, I
B
=
−
5 mA
−
0.3
V
Transition frequency
f
T
V
CB
=
−
10 V, I
E
=
1 mA, f
=
200 MHz
80
MHz
Collector output capacitance
C
ob
V
CB
=
−
10 V, I
E
=
0, f
=
1 MHz
3.5
pF
(Common base, input open circuited)
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
4.0
±
0.2
0.75 max.
2.0
±
0.2
0.45
(2.5) (2.5)
0.7
±
0.1
2
3
1
+0.20
–0.10
0.45
+0.20
–0.10
7.6
3.0
±
0.2
(0.8)
(0.8)
15.6
±
0.5
1: Emitter
2: Collector
3: Base
NS-B1 Package
Rank
Q
R
S
No rank
h
FE
160 to 260
210 to 340
290 to 460
160 to 460
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).