Transistors
1
Publication date: February 2003
SJC00009BED
2SA1022
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC2295
■
Features
•
High frequency voltage f
T
•
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−
30
V
Collector-emitter voltage (Base open)
V
CEO
−
20
V
Emitter-base voltage (Collector open)
V
EBO
−
5
V
Collector current
I
C
−
30
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Base-emitter voltage
V
BE
V
CE
=
−
10 V, I
C
=
−
1 mA
−
0.7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
−
10 V, I
E
=
0
−
0.1
µ
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
=
−
20 V, I
B
=
0
−
100
µ
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
=
−
5 V, I
C
=
0
−
10
µ
A
Forward current transfer ratio
*
h
FE
V
CE
=
−
10 V, I
C
=
−
1 mA
70
220
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
−
10 mA, I
B
=
−
1 mA
−
0.1
V
Transition frequency
f
T
V
CB
=
−
10 V, I
E
=
1 mA, f
=
200 MHz
150
300
MHz
Noise figure
NF
V
CB
=
−
10 V, I
E
=
1 mA, f
=
5 MHz
2.8
dB
Reverse transfer impedance
Z
rb
V
CB
=
−
10 V, I
E
=
1 mA, f
=
2 MHz
22
Ω
Reverse transfer capacitance
C
re
V
CE
=
−
10 V, I
C
=
−
1 mA, f
=
10.7 MHz
1.2
pF
(Common emitter)
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Rank
B
C
h
FE
70 to 140
110 to 220
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).