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Transistors

1

Publication date: February 2003

SJC00009BED

2SA1022

Silicon PNP epitaxial planar type

For high-frequency amplification

Complementary to 2SC2295

Features

High frequency voltage f

T

Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing

Absolute Maximum Ratings  

T

a

 

=

 25

°

C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

30

V

Collector-emitter voltage (Base open)

V

CEO

20

V

Emitter-base voltage (Collector open)

V

EBO

5

V

Collector current

I

C

30

mA

Collector power dissipation

P

C

200

mW

Junction temperature

T

j

150

°

C

Storage temperature

T

stg

55 to

 +

150

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Base-emitter voltage

V

BE

V

CE

 

=

 

10 V, I

C

 

=

 

1 mA

 0.7

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 

=

 

10 V, I

E

 

=

 0

 0.1

µ

A

Collector-emitter cutoff current (Base open)

I

CEO

V

CE

 

=

 

20 V, I

B

 

=

 0

100

µ

A

Emitter-base cutoff current (Collector open)

I

EBO

V

EB

 

=

 

5 V, I

C

 

=

 0

10

µ

A

Forward current transfer ratio 

*

h

FE

V

CE

 

=

 

10 V, I

C

 

=

 

1 mA

70

220

Collector-emitter saturation voltage

V

CE(sat)

I

C

 

=

 

10 mA, I

B

 

=

 

1 mA

 0.1

V

Transition frequency

f

T

V

CB

 

=

 

10 V, I

E

 

=

 1 mA, f 

=

 200 MHz

150

300

MHz

Noise figure

NF

V

CB

 

=

 

10 V, I

E

 

=

 1 mA, f 

=

 5 MHz

2.8

dB

Reverse transfer impedance

Z

rb

V

CB

 

=

 

10 V, I

E

 

=

 1 mA, f 

=

 2 MHz

22

Reverse transfer capacitance

C

re

V

CE

 

=

 

10 V, I

C

 

=

 

1 mA, f 

=

 10.7 MHz

1.2

pF

(Common emitter)

Electrical Characteristics  

T

a

 

=

 25

°

±

 3

°

C

0.40

+0.10

–0.05

(0.65)

1.50

+0.25 –0.05

2.8

+0.2 –0.3

2

1

3

(0.95) (0.95)

1.9

±

0.1

2.90

+0.20

–0.05

0.16

+0.10

–0.06

0.4

±

0.2

10˚

0 to 0.1

1.1

+0.2 –0.1

1.1

+0.3 –0.1

Rank

B

C

h

FE

70 to 140

110 to 220

Unit: mm

1: Base
2: Emitter
3: Collector

EIAJ: SC-59

Mini3-G1 Package

Marking Symbol: E

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

This product complies with the RoHS Directive (EU 2002/95/EC).

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