© 2013 Fairchild Semiconductor Corporation
21
FEBFDD850N10LD_CS001
• Rev. 1.0.0
9.5.
Temperature
Test Conditions
Connect the power resistor (85
Ω
) to the CON2 and measure the saturated temperature.
Table 10.
Test Result of V
OUT
= 55 V (35 W)
V
IN
=20.4 V
V
IN
=24 V
V
IN
=27.6 V
Remark
BoostPak (Q11)
66.9°C
61.5°C
59.3°C
PKG Top
Inductor
63.7°C
59.6°C
56.6°C
R8~R14
57.6°C
52.8°C
49.8°C
MOSFET (Q12)
50.8°C
50.0°C
52.1°C
R45~R49
58.9°C
57.3°C
60°C
Figure 27.
Temperature Curve
Figure 28.
IR Image for V
IN
=24 V
50.0
52.0
54.0
56.0
58.0
60.0
62.0
64.0
66.0
68.0
70.0
72.0
74.0
20.4
24
27.6
Te
m
p
e
ra
tu
re
[
℃
]
Input Voltage, Vin [V]
BoostPak(FDD850N10LD, Q11) = 61.5
℃
