NXP Semiconductors
UM11653
RDGD3160I3PH5EVB Reference Design
Name
Description
Phase current feedback connector
Current feedback connections from U, V, and W phases
Resolver signals connector
Resolver excitation signals (see schematic for more information)
Table 3. RDGD3160I3PH5EVB connector descriptions
4.2.6 Power supply and jumper configuration
Figure 6. Power supply and jumper locations
Name
Function
J2
Low-side phase U VEE select. Negative voltage supply for gate of IGBT.
•
1-2 negative VEE voltage (default) typically −5.0 V to −8.0 V
•
2-3 VEE voltage equal to GND2
J3
High-side phase U VEE select. Negative voltage supply for gate of IGBT.
•
1-2 negative VEE voltage (default) typically −5.0 V to −8.0 V
•
2-3 VEE voltage equal to GND2
J5
High-side phase V VEE select. Negative voltage supply for gate of IGBT.
•
1-2 negative VEE voltage (default) typically −5.0 V to −8.0 V
•
2-3 VEE voltage equal to GND2
J6
Low-side phase V VEE select. Negative voltage supply for gate of IGBT.
•
1-2 negative VEE voltage (default) typically −5.0 V to −8.0 V
•
2-3 VEE voltage equal to GND2
J7
High-side phase W VEE select. Negative voltage supply for gate of IGBT.
•
1-2 negative VEE voltage (default) typically −5.0 V to −8.0 V
•
2-3 VEE voltage equal to GND2
J8
Low-side phase W VEE select. Negative voltage supply for gate of IGBT.
•
1-2 negative VEE voltage (default) typically −5.0 V to −8.0 V
•
2-3 VEE voltage equal to GND2
J100
Used for routing DC voltage from VSUP connection terminal
SJ1 to SJ6
Solder jumpers used for 5.0 V operation connecting VSUP to VDD on each gate drive device
SW1
Not used (internal purposes only)
VCCHU
High-side phase U VCC voltage test point
Isolated positive voltage supply (15 V to 18 V)
UM11653
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User manual
Rev. 1 — 12 August 2021
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