
NXP Semiconductors
UM11697
RDGD31603PSMKEVM three-phase inverter kit
4.2 Kit featured components
4.2.1 Voltage domains, GD3160 pinout, logic header, and IGBT pinout
The low-voltage domain is an externally supplied 12 V DC (VPWR) primary supply for
non- isolated circuits, typically supplied by a vehicle battery. The low-voltage domain
includes the interface between the MCU and GD3160 control registers and logic control.
The low-side driver and high-side driver domains are isolated high-voltage driver control
domains for SiC MOSFET or IGBT single phase connections and control circuits. The
pins on the bottom of the board are designed to easily connect to a compatible three-
phase SiC MOSFET or IGBT module.
Figure 1. RDGD3160PSMKEVM three-phase inverter board voltage domains and interfaces
4.2.2 GD3160 pinout and MCU interface pinout
See the GD3160 advanced IGBT/SiC gate driver data sheet for specific information
about pinout, pin descriptions, specifications, and operating modes. The VSUP/VPWR
DC supply terminal is a low voltage input connection for supplying power to the low
voltage non- isolated die and related circuitry. A GD3160 application is typically supplied
by a +12 V DC vehicle battery.
The KITGD3160TREVB MCU/translator included with the kit can be attached to this
board at the 24 pin dual row header pin interface. All gate drivers can be accessed via
SPI control using FlexGUI software.
The external connector (20 pin) can be used for monitoring interrupts, PWM inputs, and
other miscellaneous logic I/O signals from gate drive devices. See schematic for details.
UM11697
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2021. All rights reserved.
User manual
Rev. 1 — 10 December 2021
6 / 39