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NXP Semiconductors
UM11697
RDGD31603PSMKEVM three-phase inverter kit
4.2.9 Advanced IGBT gate driver
4.2.9.1 General description
The GD3160 is an advanced single channel gate driver for IGBTs. Integrated Galvanic
isolation and low on-resistance drive transistors provide high charging and discharging
current, low dynamic saturation voltage, and rail-to-rail gate voltage control.
Current and temperature sense minimizes IGBT stress during faults. Accurate and
configurable under voltage lockout (UVLO) provides protection while ensuring sufficient
gate drive voltage headroom.
The GD3160 autonomously manages severe faults and reports faults and status via the
INTB pin and a SPI interface. It is capable of directly driving gates of most IGBTs. Self-
test, control, and protection functions are included for design of high reliability systems
(ASIL C/D). It meets the stringent requirements of automotive applications and is fully
AEC-Q100 grade 1 qualified.
4.2.9.2 GD3160 features
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Compatible with current sense and temp sense IGBTs
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Fast short circuit protection for IGBT/SiC with DESAT and current sense feedback
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Compliant with ASIL D ISO 26262 functional safety requirements
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SPI interface for safety monitoring, programmability, and flexibility
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Integrated Galvanic signal isolation
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Integrated gate drive power stage capable of 15 A peak source and sink
•
Interrupt pin for fast response to faults
•
Compatible with negative gate supply
•
Compatible with 200 V to 1700 V IGBTs, power range > 125 kW
•
AEC-Q100 grade 1 qualified
4.2.10 IGBT pin connections
Figure 9. Module connection pins
UM11697
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© NXP B.V. 2021. All rights reserved.
User manual
Rev. 1 — 10 December 2021
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