NXP Semiconductors RDGD31603PSMKEVM, Руководство пользователя, Страница: 12 / 39

NXP Semiconductors
UM11697
RDGD31603PSMKEVM three-phase inverter kit
Name Description
R243 1 kΩ pot to adjust VEE level high-side phase U
R219 1 kΩ pot to adjust VEE level low-side phase U
R256 1 kΩ pot to adjust VEE level high-side phase V
R232 1 kΩ pot to adjust VEE level low-side phase V
R263 1 kΩ pot to adjust VEE level high-side phase W
R239 1 kΩ pot to adjust VEE level low-side phase W
Table 5. RDGD31603PSMKEVM connector, jumper and potentiometer descriptions
...continued
4.2.6 Power supply test points
Figure 6. RDGD31603PSMKEVM power supply test points
Name Function
VCCHU High-side phase U VCC voltage test point Isolated positive voltage supply (11 V to 28 V)
VEEHU High-side phase U VEE voltage test point
Isolated negative voltage supply (-1.25 V to -7.5 V)
GNDHU High-side phase U isolated ground
VCCHV High-side phase V VCC voltage test point Isolated positive voltage supply (11 V to 28 V)
VEEHV High-side phase V VEE voltage test point
Isolated negative voltage supply (-1.25 V to -7.5 V)
GNDHV High-side phase V isolated ground
VCCHW High-side phase W VCC voltage test point Isolated positive voltage supply (11 V to 28 V)
UM11697 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2021. All rights reserved.
User manual Rev. 1 — 10 December 2021
12 / 39