MPC555 / MPC556
FLASH ELECTRICAL CHARACTERISTICS FOR ALL J76N MASK SETS AND
0K02A AND 1K02A ONLY
MOTOROLA
USER’S MANUAL
Rev. 15 October 2000
H-3
H.1.1 Flash Module Life
H.2 Programming and Erase Algorithm
Table H-3 Flash Module Life
Symbol
Meaning
Value
P/E Cycles
1
NOTES:
1. Target failure rate at specified number of program/erase cycles of 2ppm pending characterization of production
silicon.
Maximum Number of Program/ Erase cycles
2
to Guarantee
Data Retention
2. A program/erase cycle is defined as switching the bits from 1
➝
0
➝
1.
100
3,4
3. Reprogramming of a CMF array block prior to erase is not required.
4. Number of program/erase cycles to be adjusted pending characterization of production silicon.
Retention
Data Retention at Average Operating Temperature of 85 °C
Minimum 10 years
Table H-4 CMF Programming Algorithm (v5)
No. of Pulses
(Maximum)
Pulse Width
NVR
PAWs
GDB
PAWs
Mode
Description
3500
25.6
µ
s
X
000
X
Normal
Table H-5 CMF Erase Algorithm (v5)
No. of Pulses
(Maximum)
Pulse Width
NVR
PAWs
GDB
PAWs
Mode
Description
10
1 s
X
111
X
Mode 7P
Positive drain ramp
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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