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4.5 Flash and EEPROM
4.5.1 Overview
This device includes various configuration of flash and EEPROM. The controller for
flash and EEPROM is ideal for single-supply applications for field programming without
external high voltage sources for program or erase operations.
The flash memory is ideal for single-supply applications that allow for field
reprogramming without requiring external high voltage sources for program or erase
operations. The flash module includes a memory controller that executes commands to
modify flash memory contents. The user interface to the memory controller consists of
the indexed flash common command object (FCCOB) register, which is written to with
the command, global address, data, and any required command parameters. The memory
controller must complete the execution of a command before the FCCOB register is
written to with a new command.
CAUTION
A flash byte or longword must be in the erased state before
being programmed. Cumulative programming of bits within a
flash byte or longword is not allowed.
The flash memory is read as bytes. Read access time is one bus
cycle for bytes. For flash memory, an erased bit reads 1 and a
programmed bit reads 0. It is possible to read from flash
memory while commands are being executed on EEPROM
memory. It is not possible to read from EEPROM memory
while a command (erase/program) is executing on flash
memory. Simultaneous EEPROM memory are implemented
with error correction codes (ECC) that can resolve single bit
faults and detect double bit faults.
The following figure shows the block diagram of the flash and EEPROM module.
Flash and EEPROM
MC9S08PA4 Reference Manual, Rev. 5, 08/2017
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NXP Semiconductors
Содержание MC9S08PA4
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