AN10907
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Application note
Rev. 1 — 28 December 2010
25 of 82
NXP Semiconductors
AN10907
TEA1613T resonant power supply control IC
7. MOSFET
drivers
GATELS and GATEHS
The TEA1613T provides 2 outputs for driving external high voltage power MOSFETs:
•
GATELS for driving the low side of the HBC MOSFET
•
GATEHS for driving the high side of the HBC MOSFET
7.1 GATELS and GATEHS
Both drivers have identical driving capabilities for the gate of an external high-voltage
power MOSFET. The low-side driver is referenced to pin PGND and is supplied from
SUPREG. The high-side driver is floating, referenced to HB, the connection to the
midpoint of the external half-bridge. The high-side driver is supplied by a capacitor on
SUPHS that is supplied by an external bootstrap function by SUPREG. The capacitor on
SUPHS is charged by the bootstrap diode when the low-side MOSFET is on.
Both MOSFET drivers have a strong current source capability and an extra strong current
sink capability. In general, operation of the HBC it is not critical to be able to quickly switch
on the external MOSFET, as the HB node automatically swings to the correct state after
switch off. Fast switch off however, is important to limit switching losses and prevent
delays especially at high frequency.
7.2 Supply voltage and power consumption
For a description of the supply voltages and power consumption by the MOSFET drivers
see
Fig 12. GATELS and GATEHS drivers
001aal437
SUPHS
GATEHS
GATELS
HB
SUPREG
V
BOOST
TEA1613
