Electrical Specifications
FLASH Memory Characteristics
MC68HC908AB32
—
Rev. 1.0
Technical Data
MOTOROLA
Electrical Specifications
385
23.13 FLASH Memory Characteristics
Characteristic
Symbol
Min
Max
Unit
FLASH program bus clock frequency
—
1
—
MHz
FLASH read bus clock frequency
f
Read
(1)
Notes:
1. f
Read
is defined as the frequency range for which the FLASH memory can be read.
32k
8.4M
Hz
FLASH page erase time
t
Erase
(2)
2. If the page erase time is longer than t
Erase
(Min), there is no erase-disturb, but it reduces the endurance of the
FLASH memory.
1
—
ms
FLASH mass erase time
t
MErase
(3)
3. If the mass erase time is longer than t
MErase
(Min), there is no erase-disturb, but it reduces the endurance of
the FLASH memory.
4
—
ms
FLASH PGM/ERASE to HVEN set up time
t
nvs
10
—
µ
s
FLASH high-voltage hold time
t
nvh
5
—
µ
s
FLASH high-voltage hold time (mass erase)
t
nvhl
100
—
µ
s
FLASH program hold time
t
pgs
5
—
µ
s
FLASH program time
t
PROG
30
40
µ
s
FLASH return to read time
t
rcv
(4)
4. t
rcv
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump,
by clearing HVEN to logic 0.
1
—
µ
s
FLASH cumulative program hv period
t
HV
(5)
5. t
HV
is defined as the cumulative high voltage programming time to the same row before next erase.
t
HV
must satisfy this condition: t
nvs
+ t
nvh
+ t
pgs
+ (t
PROG
×
64)
≤
t
HV
max.
—
4
ms
FLASH row erase endurance
(6)
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least
this many erase / program cycles.
—
10,000
—
Cycles
FLASH row program endurance
(7)
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least
this many erase / program cycles.
—
10,000
—
Cycles
FLASH data retention time
(8)
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum
time specified.
—
10
—
Years
Содержание MC68HC908AB32
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