Electrical Specifications
EEPROM and Memory Characteristics
MC68HC908AB32
—
Rev. 1.0
Technical Data
MOTOROLA
Electrical Specifications
377
23.7 EEPROM and Memory Characteristics
Low-voltage inhibit reset/recover hysteresis – target
H
LVI
100
150
—
mV
POR rearm voltage
(7)
V
POR
0
—
200
mV
POR reset voltage
(8)
V
PORRST
0
—
800
mV
POR rise time ramp rate
(9)
R
POR
0.02
—
—
V/ms
Notes:
1. V
DD
= 5.0 Vdc
±
10%, V
SS
= 0 Vdc, T
A
= T
L
to T
H
, unless otherwise noted
2. Typical values reflect average measurements at midpoint of voltage range, 25
°
C only.
3. Run (operating) I
DD
measured using external square wave clock source (f
BUS
= 8.4 MHz). All inputs 0.2 V from rail. No dc
loads. Less than 100 pF on all outputs. C
L
= 20 pF on OSC2. All ports configured as inputs. OSC2 capacitance linearly
affects run I
DD
. Measured with all modules enabled.
4. Wait I
DD
measured using external square wave clock source (f
BUS
= 8.4 MHz). All inputs 0.2 V from rail. No dc loads. Less
than 100 pF on all outputs. C
L
= 20 pF on OSC2. All ports configured as inputs. OSC2 capacitance linearly affects wait
I
DD
. Measured with PLL and LVI enabled.
5. Stop I
DD
is measured with OSC1 = V
SS
.
6. Pullups are disabled. Port B leakage is specified in
7. Maximum is highest voltage that POR is guaranteed.
8. Maximum is highest voltage that POR is possible.
9. If minimum V
DD
is not reached before the internal POR reset is released, RST must be driven low externally until minimum
V
DD
is reached.
Characteristic
Symbol
Min
Max
Unit
RAM data retention voltage
V
RDR
0.7
—
V
EEPROM programming time per byte
t
EEPGM
10
—
ms
EEPROM erasing time per byte
t
EBYTE
10
—
ms
EEPROM erasing time per block
t
EBLOCK
10
—
ms
EEPROM erasing time per bulk
t
EBULK
10
—
ms
EEPROM programming voltage discharge period
t
EEFPV
100
—
µ
s
Number of programming operations to the same EEPROM
byte before erase
(1)
Notes:
1. Programming a byte more times than the specified maximum may affect the data integrity of that byte. The byte must
be erased before it can be programmed again.
—
—
8
—
EEPROM write/erase cycles at 10ms write time (85
°
C)
—
10,000
—
Cycles
EEPROM data retention after 10,000 write/erase cycles
—
10
—
Years
Characteristic
(1)
Symbol
Min
Typ
(2)
Max
Unit
Содержание MC68HC908AB32
Страница 1: ...MC68HC908AB32 D REV 1 0 MC68HC908AB32 HCMOS Microcontroller Unit TECHNICAL DATA ...
Страница 2: ......
Страница 68: ...FLASH Memory Technical Data MC68HC908AB32 Rev 1 0 68 FLASH Memory MOTOROLA ...
Страница 84: ...EEPROM Technical Data MC68HC908AB32 Rev 1 0 84 EEPROM MOTOROLA ...
Страница 108: ...Central Processor Unit CPU Technical Data MC68HC908AB32 Rev 1 0 108 Central Processor Unit CPU MOTOROLA ...
Страница 130: ...System Integration Module SIM Technical Data MC68HC908AB32 Rev 1 0 130 System Integration Module SIM MOTOROLA ...
Страница 338: ...Input Output I O Ports Technical Data MC68HC908AB32 Rev 1 0 338 Input Output I O Ports MOTOROLA ...
Страница 364: ...Low Voltage Inhibit LVI Technical Data MC68HC908AB32 Rev 1 0 364 Low Voltage Inhibit LVI MOTOROLA ...
Страница 386: ...Electrical Specifications Technical Data MC68HC908AB32 Rev 1 0 386 Electrical Specifications MOTOROLA ...
Страница 390: ...Ordering Information Technical Data MC68HC908AB32 Rev 1 0 390 Ordering Information MOTOROLA ...
Страница 391: ......