9.
Electrical Characteristics
This section outlines the main parameters required to build applications. The module characteristics are determined
by the implemented parts.
9.1
Absolute Maximum Ratings
The values listed in this section are the ratings that can be peaked by the device, but not sustained without causing
irreparable damage to the device.
Table 9-1. ATSAMR30M18A Absolute Maximum Ratings
Symbol Parameter
Condition
Min.
Typ.
Max.
Unit
T
STOR
Storage temperature
—
-50
—
+150
°C
V
PIN
Pin voltage with respect to GND
and VDD
—
GND – 0.6 V
—
VDD + 0.6 V
V
V
ESD
ESD robustness
(1)
Module IO is routed to
ATSAMR30 human body
model
—
—
4
kV
Charged device model
—
—
450
V
P
RF
Input RF level
—
—
—
+12
dBm
Note:
1.
This value is derived from the ATSAMR30E18A IC.
9.2
Recommended Operating Conditions
The following table provides the recommended operating conditions for the ATSAMR30M18A module.
Table 9-2. Recommended Operating Conditions
Symbol
Parameter
Min.
Typ.
Max.
Unit
T
OP
Operating temperature range
-40
25
85
°C
VDD
Supply voltage
1.8
3.3
3.63
V
9.3
Module Performance
This section provides the module characteristics.
9.3.1
General RF Specifications
The following table provides the ATSAMR30M18A general RF specifications.
Test Conditions (unless otherwise stated):
V
DD
= 3.3V, f
RF
= 914 MHz, T
OP
= +25°C
ATSAMR30M18A
Electrical Characteristics
©
2018-2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS70005384B-page 33