External Memory Interface Diagram Examples
B-3
Figure B.3
128, 256, 512 Kbyte or 1 Mbyte Interface with 150 ns Memory
LSI53C1000
27C020-15/
MOE/
OE
MCE/
CE
D[7:0]
8
MAD[7:0]
Bus
CK
Q[7:0]
8
A[7:0]
QE
D[7:0]
CK
Q[7:0]
QE
8
A[15:8]
8
V
DD
MAS0/
MAS1/
8
Note: MAD[2:0] pulled LOW internally. MAD bus sense logic enabled for 128, 256, 512 Kbytes, or 1 Mbyte of fast
memory (150 ns devices @ 66 MHz). The HCT374s may be replaced with HCT377s.
HCT374
HCT374
GPIO4
MWE/
VPP
Control
+ 12 V
VPP
WE
Optional - for Flash Memory only, not
required for EEPROMS.
28F020-15/
Socket
D[7:0]
MAD3
4.7 K
D[3:0]
CK
Q[3:0]
QE
4
4
HCT377
MAD[3:0]
Bus
E
A[19:16]
Содержание LSI53C1000
Страница 6: ...vi Preface...
Страница 16: ...xvi Contents...
Страница 28: ...1 12 Introduction...
Страница 234: ...4 124 Registers...
Страница 314: ...6 40 Specifications This page intentionally left blank...
Страница 318: ...6 44 Specifications This page intentionally left blank...
Страница 344: ...6 70 Specifications This page intentionally left blank...
Страница 350: ...6 76 Specifications Figure 6 42 LSI53C1000 329 Ball Grid Array Bottom view...
Страница 352: ...6 78 Specifications...
Страница 360: ...A 8 Register Summary...
Страница 376: ...IX 12 Index...