6-48
Specifications
Figure 6.27 Normal/Fast Memory (
≥
128 Kbytes) Single Byte Access Read Cycle
Table 6.33
Normal/Fast Memory (
≥
128 Kbytes) Single Byte Access Read Cycle
Symbol
Parameter
Min
Max
Unit
t
11
Address setup to MAS/ high
25
–
ns
t
12
Address hold from MAS/ high
15
–
ns
t
13
MAS/ pulse width
25
–
ns
t
14
MCE/ LOW to data clocked in
150
–
ns
t
15
Address valid to data clocked in
205
–
ns
t
16
MOE/ LOW to data clocked in
100
–
ns
t
17
Data hold from address, MOE/, MCE/ change
0
–
ns
t
18
Address out from MOE/, MCE/ HIGH
50
–
ns
t
19
Data setup to CLK HIGH
5
–
ns
CLK
(Driven by System)
Data Driven by Memory)
1
2
3
4
5
6
7
8
9
10
MAD
(Addr driven by LSI53C1000;
High Order
Address
Middle Order
Address
Low Order
Address
MAS1/
(Driven by LSI53C1000)
MAS0/
(Driven by LSI53C1000)
MCE/
(Driven by LSI53C1000)
MOE/
(Driven by LSI53C1000)
MWE/
(Driven by LSI53C1000)
t
13
t
11
t
12
t
15
t
14
t
16
Содержание LSI53C1000
Страница 6: ...vi Preface...
Страница 16: ...xvi Contents...
Страница 28: ...1 12 Introduction...
Страница 234: ...4 124 Registers...
Страница 314: ...6 40 Specifications This page intentionally left blank...
Страница 318: ...6 44 Specifications This page intentionally left blank...
Страница 344: ...6 70 Specifications This page intentionally left blank...
Страница 350: ...6 76 Specifications Figure 6 42 LSI53C1000 329 Ball Grid Array Bottom view...
Страница 352: ...6 78 Specifications...
Страница 360: ...A 8 Register Summary...
Страница 376: ...IX 12 Index...