LSI Logic Confidential
Supported Number of Simultaneous Banks
13-7
Copyright © 2001, 2002 by LSI Logic Corporation. All rights reserved.
bank_select are the row address bits. The top-most bit is decoded into
individual chip select bits in multiple DRAM configurations, except when
two (x32) 4 bank parts are used. In the latter case, the chip select field
is inserted between the first and second bit of the bank select field to
provide tile interleaving.
For external DRAM configurations, the pinout for address
SDRAM_A[15:0] is as follows:
The internal linear address breakdown is shown below,
where c is the column size, b is the bank select field, r is the row size
field, and the chip select field is decoded to set the CS pins: CS_field = 0
sets SDRAM_A[15], and CS_field = 1 sets SDRAM_A[14].
Note:
Bank Select pin connections for DDR-based systems differ
in the way the extended mode register (EMR) programming
is defined in the DRAM chip on the board. If the EMR is
defined as {BA1, BA0, Adr pins} for the DRAM, then the
two bank select pins of DoMiNo need to be connected to
the DRAM in order (more significant DoMiNo BA pin to
BA1, less significant DoMiNo BA pin to BA0). However, if
the EMR is defined as {BA0, BA1, Adr pins} for the DRAM
(e.g., micron chips), then the two bank select pins of
DoMiNo need to be connected in the reverse order (more
significant DoMiNo BA pin to BA0, less significant DoMiNo
BA pin to BA1).
13.3 Supported Number of Simultaneous Banks
Within a transaction, up to four active DRAM banks are used. A
misaligned 9 V x 64 H transaction will touch at most 4 pages in separate
banks (with the DMN-8600 tiled image format). The bank precharge and
CS Pins
BA Pins, Adr Pins
[15:14]
[13:0]
23
c + b + r
c + b + r
−
1
c + b
c + b
−
1
c
c
−
1
0
Chip select field
Row Address
Bank Select
Column Address
Содержание DMN-8600
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