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Section 3: Test subroutine library reference

S530 Parametric Test System Test Subroutine Library User's Manual

3-62

S530-907-01 Rev. A / September 2015

vbes

This subroutine measures base-emitter voltage of a bipolar transistor.

Usage

double vbes(int

e

, int

b

, int

c

, int

sub

, double

ipgm

, char

type

)

e

Input

The emitter pin of the device

b

Input

The base pin of the device

c

Input

The collector pin of the device

sub

Input

The substrate pin of the device

ipgm

Input

The forced current, in amperes

type

Input

Type of transistor:

"N"

or

"P"

Returns

Output

-1.0 = Type not specified as "N" or "P"
+2.0E+21 = Voltage limit reached; measured voltage is within 98 % of
the 3 V limit

Details

For a PNP transistor, this subroutine measures the base-emitter voltage at a specified emitter current
with the base and collector terminals tied to ground.

For an NPN transistor, this subroutine measures the emitter-base voltage at a specified base current
with the emitter and collector terminals tied to ground.

If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not
specified, the substrate is left floating.

A delay is incorporated into the

vbes

subroutine; this delay is calculated time required for stable

forcing of

ipgm

with a 3 V voltage limit.

V/I polarities

The polarity of

ipgm

is determined by device type.

Source-measure units (SMUs)



SMU1: Forces

ipgm

, 3 V voltage limit, measures

vbes

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Содержание S530

Страница 1: ...www keithley com S530 Parametric Test System Test Subroutine Library User s Manual S530 907 01 Rev A September 2015 PS53090701A S530 907 01A A Tektronix Company A Greater Measure of Confidence...

Страница 2: ...rein in whole or in part without the prior written approval of Keithley Instruments is strictly prohibited All Keithley Instruments product names are trademarks or registered trademarks of Keithley In...

Страница 3: ...be connected to mains These instruments will be marked as category II or higher Unless explicitly allowed in the specifications operating manual and instrument labels do not connect any instrument to...

Страница 4: ...y disposed of according to federal state and local laws The WARNING heading in the user documentation explains dangers that might result in personal injury or death Always read the associated informat...

Страница 5: ...and JFET subroutines 2 5 Math and support subroutines 2 5 Test subroutine library reference 3 1 Subroutine descriptions 3 1 beta1 3 1 beta2 3 3 beta2a 3 4 beta3a 3 6 bice 3 8 bkdn 3 9 bvcbo 3 10 bvcbo...

Страница 6: ...User s Manual isubmx 3 46 kdelay 3 47 leak 3 48 logstp 3 49 rcsat 3 50 re 3 53 res 3 55 res2 3 56 res4 3 57 resv 3 58 rvdp 3 59 tdelay 3 60 tox 3 61 vbes 3 62 vf 3 63 vg2 3 64 vgsat 3 66 vp 3 67 vp1 3...

Страница 7: ...n about how the descriptions of the subroutines are presented and a categorized list of the subroutines with links to the individual subroutine descriptions Test subroutine library reference Detailed...

Страница 8: ...ine does Figure 1 Example purpose statement Usage A line of code representing the prototype of the subroutine followed by a table listing the input and output parameters for the subroutine Parameters...

Страница 9: ...escription of what each SMU in the test configuration does in the subroutine This information is only applicable in some subroutines Figure 5 Example SMUs description Schematic A simplified schematic...

Страница 10: ...on page 3 11 bvceo Measure collector emitter breakdown voltage base open bvceo on page 3 13 bvceo2 Measure collector emitter breakdown voltage using LPTLib bsweepv subroutine bvceo2 on page 3 14 bvces...

Страница 11: ...e forward junction voltage of a diode vf on page 3 63 MOSFET subroutines Subroutine Description Link bvdss Measure drain source breakdown voltage VG 0 bvdss on page 3 17 bvdss1 Measure drain source br...

Страница 12: ...ge 3 43 vp Estimate FET pinch off voltage for a MESFET vp on page 3 67 vp1 Estimate MESFET pinch off at IDS IP and VDS vp1 on page 3 69 Math and support subroutines Subroutine Description Link fnddat...

Страница 13: ...itter current in amperes vcb Input The forced c to b bias in volts type Input Type of transistor N or P Returns Output The calculated beta of the device 1 0 TYPE not N or P 2 0 SMU2 overload 3 0 Divid...

Страница 14: ...al 3 2 S530 907 01 Rev A September 2015 V I polarities The polarities of VCB and IE are determined by device type Source measure units SMUs SMU1 Forces VCB default current limit SMU2 Forces 0 0 V meas...

Страница 15: ...ut The measured base voltage icout Output The measured collector current Returns Output The calculated beta 1 0 TYPE not N or P 2 0 SMU2 overload 3 0 Divide by 0 or 0 01 4 0 10 K 5 0 Too many iteratio...

Страница 16: ...ieout double error e Input The emitter pin of the device b Input The base pin of the device c Input The collector pin of the device sub Input The substrate pin of the device ice Input The targeted col...

Страница 17: ...collector current measured and is calculated The percent error error is calculated between the target ICE and the final measured ICE and returned If a zero or negative substrate pin is specified the...

Страница 18: ...itter current IBE search in amperes ibe2 Input The end of the base emitter current IBE search in amperes vsub Input The forced substrate bias in volts ibe Output The final measured emitter base curren...

Страница 19: ...library reference S530 907 01 Rev A September 2015 3 7 Source measure units SMUs SMU1 Forces VCE maximum current limit triggers on ICE SMU2 Searches IBE 3 V voltage limit SMU3 Forces VSUB default cur...

Страница 20: ...oint of the VBE sweep in volts vbe2 Input The end point of the VBE sweep in volts vsub Input Substrate bias in volts npts Input The number of points in the sweep ice_last Output The measured ICE array...

Страница 21: ...O pin of the device sub Input The substrate pin of the device ipgm Input The forced current in amperes vlim Input The voltage limit in volts Returns Output The measured breakdown voltage 2 0E 21 Measu...

Страница 22: ...vice ipgm Input The forced collector base current ICB in amperes vlim Input The collector voltage limit in volts type Input Type of transistor N or P Returns Output Collector base voltage 1 0 TYPE not...

Страница 23: ...max int nstep double ipgm double udelay char type e Input The emitter pin of the device b Input The base pin of the device c Input The collector pin of the device sub Input The substrate pin of the de...

Страница 24: ...increment is returned as BVCBO1 If a positive substrate pin is specified the substrate is grounded If a positive substrate pin is not specified the substrate is left floating The udelay parameter shou...

Страница 25: ...rrent ICE in amperes vlim Input The collector voltage limit in volts type Input Type of transistor N or P Returns Output Collector emitter voltage 1 0 TYPE not N or P 2 0E 21 Voltage limit reached mea...

Страница 26: ...ter current ICE in amperes udelay Input The delay between VCE steps in seconds type Input Type of transistor N or P Returns Output Collector emitter voltage 1 0 TYPE not N or P 1 0E 21 Device triggere...

Страница 27: ...ipgm Input The forced ICES in amperes vlim Input The collector voltage limit in volts type Input Type of transistor N or P Returns Output Collector emitter base voltage 1 0 TYPE not N or P 2 0E 21 Vol...

Страница 28: ...emin double vcemax int nstep double ipgm double udelay char type e Input The emitter pin of the device b Input The base pin of the device c Input The collector pin of the device sub Input The substrat...

Страница 29: ...itance of the device under test V I polarities The polarities of vcemin vcemax and ipgm are determined by device type Source measure units SMUs SMU1 Forces VCE programmed current limit 1 25 ipgm measu...

Страница 30: ...d current magnitude and polarity If a positive substrate pin is specified the substrate is grounded If a positive substrate pin is not specified the substrate is left floating A delay is incorporated...

Страница 31: ...udelay Input The delay between VDS steps in seconds type Input Type of transistor N or P Returns Output Measured breakdown voltage 1 0 TYPE not N or P 1 0E 21 Device triggered on vdsmin 2 0E 21 Devic...

Страница 32: ...voltage limit in volts type Input Type of transistor N or P Returns Output Emitter base voltage 1 0 TYPE not N or P 2 0E 21 Voltage limit reached measured voltage is within 98 of the specified voltage...

Страница 33: ...itance Details This subroutine measures the capacitance of a two terminal capacitor at a specified voltage The voltage is provided by the internal capacitance meter bias supply The result is returned...

Страница 34: ...Section 3 Test subroutine library reference S530 Parametric Test System Test Subroutine Library User s Manual 3 22 S530 907 01 Rev A September 2015 Example result cap hi lo sub vbias Schematic...

Страница 35: ...Q2 sub2 Input The substrate pin of Q2 l2 Input Drawn gate length of Q2 in microns vlow Input Start of the gate source voltage VGS search in volts vhigh Input End of the VGS search in volts vds Input...

Страница 36: ...le vstep int npts int kflag d1 Input The drain pin of Q1 g1 Input The gate pin of Q1 s1 Input The source pin of Q1 sub1 Input The substrate pin of Q1 w1 Input The drawn gate width of Q1 in microns d2...

Страница 37: ...IBE Usage void ev int e int b int c int sub double ibe double vstart double vstop int npts double vsub double slope double iflag double r double early e Input The emitter pin of the device b Input Th...

Страница 38: ...ward early voltage The correlation coefficient is returned as an estimate of the fit When calling this routine make sure the VCE start and stop values have the device well into saturation If a zero or...

Страница 39: ...h2 Input HI pin 2 h3 Input HI pin 3 h4 Input HI pin 4 l1 Input LO pin 1 l2 Input LO pin 2 l3 Input LO pin 3 l4 Input LO pin 4 v Output Measured voltage i Input Forced current in amperes Returns Output...

Страница 40: ...Output Screened y array npt2 Input Number of points in the output array np Output Number of points in the output array code Input Search x or y data array Returns Output The new array Details This sub...

Страница 41: ...sed or FALSE if TRIGH should be used Example result fndtrg low high fvmi This primitive subroutine forces a voltage and measures a current on a device with four input pins and four ground pins Usage d...

Страница 42: ...stem Test Subroutine Library User s Manual 3 30 S530 907 01 Rev A September 2015 Source measure units SMUs SMU1 Forces voltage default current limit measures current Example result fvmi h1 h2 h3 h4 l1...

Страница 43: ...vbs1 First substrate to source voltage vbs2 Second substrate to source voltage phip Surface potential in volts ithr Drain source trigger current IDS in amperes vstep Gate source voltage VGS step size...

Страница 44: ...chematic gd This subroutine calculates the drain conductance of a MOSFET Usage double gd int d int g int s int sub double vds double vgs double vbs double ids d Input The drain pin of the device g Inp...

Страница 45: ...BS for a MOSFET The drain conductance is calculated by gD IDS VDS If a zero or negative substrate pin is specified the substrate is left floating If the pin number is greater than 0 and VBS is less th...

Страница 46: ...Gate voltage in volts vgstep Input VGS step size in volts iglim Input Gate current limit in amperes iflag Output Return status flag 0 Normal completion 1 Not enough valid data for LLSQ 2 Current limit...

Страница 47: ...The base pin of the device c Input The collector pin of the device sub Input The substrate pin of the device vce Input Forced collector voltage in volts vbe Input Forced base voltage in volts vsub Inp...

Страница 48: ...530 907 01 Rev A September 2015 V I polarities NPN VBE VCE and VSUB PNP VBE VCE and VSUB Source measure units SMUs SMU1 Forces vce maximum current limit measures ice SMU2 Forces vbe maximum current li...

Страница 49: ...ge in volts vsub Input The forced substrate bias in volts Returns Output The measured collector base current Details This subroutine measures the collector base leakage current at a specified collecto...

Страница 50: ...of the device sub Input The substrate pin of the device vce Input The forced collector emitter voltage in volts vsub Input The forced substrate bias in volts Returns Output The measured leakage curren...

Страница 51: ...lector pin of the device sub Input The substrate pin of the device vces Input The forced collector emitter voltage in volts vsub Input Substrate bias in volts Returns Output The measured collector emi...

Страница 52: ...substrate source voltage VBS Usage double id1 int d int g int s int sub double vgs double vds double vbs d Input The drain pin of the device g Input The gate pin of the device s Input The source pin o...

Страница 53: ...ence S530 907 01 Rev A September 2015 3 41 V I polarities N channel VDS VGS VBS P channel VDS VGS VBS Source measure units SMUs SMU1 Forces vds default current limit measures IDS SMU2 Forces vgs defau...

Страница 54: ...evice s Input The source pin of the device sub Input The substrate pin of the device vds Input Drain source voltage in volts vbs Input Substrate bias in volts Returns Output The measured drain current...

Страница 55: ...tion current vdsat Output Saturation voltage Returns Output Measured drain current 0 0 If f 0 0 or 1 0 2 0E 21 If measured vdsat is within 98 of the gate voltage limit 4 0E 21 If idss is within 98 of...

Страница 56: ...base pin of the device c Input The collector pin of the device sub Input The substrate pin of the device vebo Input Emitter base voltage in volts vsub Input Substrate bias in volts Returns Output Reve...

Страница 57: ...he device g Input The gate pin of the device s Input The source pin of the device sub Input The substrate pin of the device vlow Input The start of the VGS sweep in volts vhigh Input The end the VGS s...

Страница 58: ...voltage VBS Usage void isubmx int d int g int s int sub double vds double vbs double vlow double vhigh int npts double ismax double vgmax d Input The drain pin of the device g Input The gate pin of th...

Страница 59: ...ismax parameter returns 1 0 if the sub parameter is less than 1 The typical value for the npts parameter is 10 to 20 V I polarities N channel VDS Vlow and Vhigh VBS P channel VDS Vlow and Vhigh VBS So...

Страница 60: ...subroutine defaults to 1 ms for calculated delays less than 1 ms it defaults to 30 s for calculated delays greater than 30 s Example kdelay npin i v leak This subroutine measures leakage current of a...

Страница 61: ...rs are valid 0 Limits cross zero or equal 0 0 Details This subroutine creates an array of logarithmic based steps from an input range xstart and xstop and the number of steps npts The array of values...

Страница 62: ...Insufficient points for LLSQ analysis 2 Calculated LLSQ slope is 0 0 Returns Output The collector resistance modeling parameter Details This subroutine estimates the modeling parameter RC in the satur...

Страница 63: ...ese delays calculate the time required for a stable forcing of base emitter current IBE with a 3 V emitter voltage limit and ICE with a 16 V voltage limit If a zero or negative substrate pin is specif...

Страница 64: ...est subroutine library reference S530 Parametric Test System Test Subroutine Library User s Manual 3 52 S530 907 01 Rev A September 2015 Example result rcsat e b c sub ice1 ice2 beta vsub npts r iflag...

Страница 65: ...ut The correlation coefficient Returns Output The estimated emitter resistance Details This subroutine uses Getreu s method Ian Getreu Modeling the Bipolar Transistor Tektronix 1976 to estimate the em...

Страница 66: ...to continue the calculation of re A delay is incorporated into the re subroutine this delay is the calculated time required for stable forcing of IBE with a 30 V voltage limit If a zero or negative su...

Страница 67: ...istance 0 0 if the itest parameter is 0 0 2 0E 21 Measured voltage is within 98 of the default voltage limit Details This subroutine calculates the resistance of a two terminal resistor by forcing a c...

Страница 68: ...Output The calculated resistance 0 0 Measured voltage is 0 002 V or itest 0 0 2 0E 21 Measured voltage is within 98 of the voltage limit Details This subroutine measures the resistance of a two termi...

Страница 69: ...s Output The calculated resistance 0 0 Measured voltage is 0 002 V 2 0E 21 Measured voltage is within 98 or the 40 V voltage limit Details This subroutine calculates the resistance of a four terminal...

Страница 70: ...v Input The forced voltage in volts Returns Output The calculated resistance 1 0E 20 Measured current is 10 pA 4 0E 21 Measured current is within 98 of the 200 mA current limit Details This subroutine...

Страница 71: ...imit Details This subroutine estimates the sheet resistance of a four terminal sample using the standard technique of forcing current through two adjacent pins and measuring the voltage developed acro...

Страница 72: ...ins connected to the charging node i Input The current in amperes v Input The voltage in volts Returns Output The calculated delay time Details This subroutine calculates the delay based on system cap...

Страница 73: ...ne makes a capacitance and a conductance measurement corrects the capacitance measurement and then calculates the oxide thickness The common equation below is used to estimate oxide thickness The oxid...

Страница 74: ...ached measured voltage is within 98 of the 3 V limit Details For a PNP transistor this subroutine measures the base emitter voltage at a specified emitter current with the base and collector terminals...

Страница 75: ...Input The LO pin of the device cathode sub Input The substrate pin of the device itest Input The forced current in amperes Returns Output Measured voltage 2 0E 21 Measured voltage is within 98 of the...

Страница 76: ...e device s Input The source pin of the device sub Input The substrate pin of the device type Input Type of transistor N or P idspec Input Target value of IDS in amperes errpct Input Maximum percent er...

Страница 77: ...re returned based on the results of the search If a zero or negative substrate pin is specified the substrate is left floating If the pin number is greater than 0 and VBS is less than 0 9 mV the subst...

Страница 78: ...sub Input Substrate bias in volts Returns Output Measured gate source voltage VGS 2 0E 21 Measured voltage VGSAT is within 98 of the specified voltage limit vlim Details This subroutine forces gate so...

Страница 79: ...of the device g Input The gate pin of the device s Input The source pin of the device sub Input The substrate pin of the device vdss Input The forced drain voltage in volts idlim Input Drain current l...

Страница 80: ...ribed as a fraction of IDSS usually 0 02 of IDSS The trigger and search routines are used to find the VGS that forces the targeted drain source current IDS value ip If a positive substrate pin is spec...

Страница 81: ...0 0 2 Device triggered on starting voltage 3 Device triggered on ending voltage Returns Output Measured VP Details This subroutine is a variant of the vp subroutine The trigger is set to the specifie...

Страница 82: ...e device vlow Input The start of the gate source voltage VGS binary search in volts vhigh Input The end of the VGS binary search in volts vds Input The forced drain voltage in volts vbs Input Substrat...

Страница 83: ...S sweep vhigh Input The end of the VGS sweep vds Input Drain voltage in volts vbs Input Substrate bias in volts ithr Input The targeted drain current IDS in amperes niter Input The number of iteration...

Страница 84: ...Rev A September 2015 V I polarities N channel VDS Vlow Vhigh VBS ITHR P channel VDS Vlow Vhigh VBS ITHR Source measure units SMUs SMU1 Force vds trigger on ithr default current limit SMU2 Search VGS 1...

Страница 85: ...slope kflag Output Return status flag 0 Normal operation 1 The ithr parameter is too high indicates that the vlow parameter is above the voltage threshold VT and the slope is constantly decreasing 2...

Страница 86: ...t and stop points for the binary search vlow vhigh but is generally the most accurate way of evaluating the extrapolated threshold voltage The vtext2 subroutine is a further variation on this techniqu...

Страница 87: ...System Test Subroutine Library User s Manual Section 3 Test subroutine library reference S530 907 01 Rev A September 2015 3 75 Example result vtext d g s sub type vlow vhigh vds vbs ithr vstep nmax s...

Страница 88: ...t Drain source trigger current IDS in amperes vstep Input VGS step size in volts npts Input The number of points in the sweep slope Output The calculated transconductance gm kflag Output Return status...

Страница 89: ...in number is greater than 0 and VBS is less than 0 9 mV the substrate is grounded In all other cases it is connected and forced The npts parameter must be greater than 5 If a value less than 5 is used...

Страница 90: ...arch in volts vds Input Drain voltage in volts vbs Input Substrate bias in volts npts Input The number of points in the sweep slope Output The calculated inductance vt Output Threshold voltage flag Ou...

Страница 91: ...routine Library User s Manual Section 3 Test subroutine library reference S530 907 01 Rev A September 2015 3 79 Source measure units SMUs See the idvsvg on page 3 45 subroutine Example vtext3 d g s su...

Страница 92: ...2 5 3 35 3 44 3 70 3 72 G gamma 3 32 L leakage current 3 39 3 45 3 50 M math math subroutines 2 5 3 29 3 30 3 49 3 51 3 62 MESFET 3 35 3 44 3 70 3 72 MOSFET drain conductance 3 33 gate length reducti...

Страница 93: ...property of Keithley Instruments All other trademarks and trade names are the property of their respective companies Keithley Instruments Corporate Headquarters 28775 Aurora Road Cleveland Ohio 44139...

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