Intel BX80532PG3200D, Техническое описание

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Electrical Specifications
32 Datasheet
NOTES:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. The V
CCP
referred to in these specifications refers to instantaneous V
CCP
.
3. Measured at 0.1 *V
CCP
.
4. Measured at 0.9 *V
CCP
.
5. For Vin between 0 V and V
CCP
. Measured when the driver is tristated.
6. Cpad1 includes die capacitance only for DPRSTP#, DPSLP#, PWRGOOD. No package parasitics are
included.
7. Cpad2 includes die capacitance for all other CMOS input signals. No package parasitics are included.
NOTES:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. Measured at 0.2 V.
3. V
OH
is determined by value of the external pull-up resistor to V
CCP
.
4. For Vin between 0 V and V
OH
.
5. Cpad includes die capacitance only. No package parasitics are included.
§
Table 8. CMOS Signal Group DC Specifications
Symbol Parameter Min Typ Max Unit Notes
1
V
CCP
I/O Voltage 1.00 1.05 1.10 V
V
IL
Input Low Voltage CMOS -0.10 0.00 0.3*V
CCP
V 2
V
IH
Input High Voltage 0.7*V
CCP
V
CCP
V
CCP
+0.1 V 2
V
OL
Output Low Voltage -0.10 0 0.1*V
CCP
V 2
V
OH
Output High Voltage 0.9*V
CCP
V
CCP
V
CCP
+0.1 V 2
I
OL
Output Low Current 1.5 — 4.1 mA 3
I
OH
Output High Current 1.5 — 4.1 mA 4
I
LI
Input Leakage Current — — ±100 µA 5
Cpad1 Pad Capacitance 1.80 2.30 2.75 pF 6
Cpad2 Pad Capacitance for CMOS Input 0.95 1.2 1.45 pF 7
Table 9. Open Drain Signal Group DC Specifications
Symbol Parameter Min Typ Max Unit Notes
1
V
OH
Output High Voltage V
CCP
–5% V
CCP
V
CCP
+5% V 3
V
OL
Output Low Voltage 0 — 0.20 V
I
OL
Output Low Current 16 — 50 mA 2
I
LO
Output Leakage Current — — ±200 µA 4
Cpad Pad Capacitance 1.80 2.30 2.75 pF 5