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EVAL-IH-R5IPB-A-V1 Evaluation board

User Guide

Usage

(a)

(b)

(c)

Figure 9 

Collector-current sensing: (a) schematic of sense circuit; (b) dependence of the IGBT peak
current on the resistance RCS; (c) comparison between IGBT collector current measured 
by Rogowski coil (yellow curve, 20 A/div) and voltage measured at pin CS (green curve, 60
mV/div), time scale: 10 µs/div.

4.1.3

 

 Tuning turn-on detection point of the IGBT

One of the critical aspects of the SEPR converter is to determine the optimal turn-on point of the IGBT, which is 

during  the  conduction  phase  of  the  parallel  diode.  The  evaluation  board  is  already  optimized  to  match  the 

optimal turn-on point of the IGBT. However, in case the resonant capacitance is replaced with a different value, 

the turn-on detection point has to be changed. In order to do so, the resistance RV- has to be changed to adjust

Application Note 

13 of 34 

V 1.1

2019-11-25

Содержание EVAL-IH-R5IPB-A-V1

Страница 1: ... used for evaluation and testing purposes They shall not be used for reliability testing or production Hence the Evaluation and Reference Boards may not comply with CE or similar standards including but not limited to the EMC Directive 2004 EC 108 and the EMC Act and may not fulfill other requirements of the country in which they are operated by the Customer The Customer shall ensure that each Eva...

Страница 2: ... Purpose of the board 5 2 2 Scope of delivery 5 3 Hardware 7 3 1 Scope of delivery 7 4 Usage 10 4 1 Settings 10 4 1 1 Replacing the IEWS20R5135IPB 10 4 1 2 Tuning collector emitter voltage sense network 11 4 1 3 Tuning turn on detection point of the IGBT 13 4 1 4 Tuning collector current sense network 14 5 Experimental results 15 5 1 Operation 15 5 1 1 Stand by mode 15 5 1 2 Normal operation and c...

Страница 3: ... IEWS20R5135IPB INN Control pin of the IEWS20R5135IPB VDET Voltage detection pin of the IEWS20R5135IPB VCE Collector to emitter voltage of the IEWS20R5135IPB IC Current entering in the collector pin of the IEWS20R5135IPB VCS Voltage between pin CS and E VVDET Voltage between pin VDET and E Application Note 3 of 34 V 1 1 2019 11 25 ...

Страница 4: ...e surfaces of the evaluation or reference board may become hot during testing Hence necessary precautions are required while handling the board Failure to comply may cause injury Caution The evaluation or reference board contains parts and assemblies sensitive to electrostatic discharge ESD Electrostatic control precautions are required when installing testing servicing or repairing the assembly C...

Страница 5: ...he device refer to Application notes 1 a b Figure 1 Evaluation board of the IEWS20R5135IPB a top and b bottom The board implements a SEPR converter for induction heating application in order to demonstrate the functionalities of the IEWS20R5135IPB during the typical operating conditions of an induction heating cooker This board also represents a design recommendation Care has been taken to optimiz...

Страница 6: ...ments Ground spring PK007 016 3 or probe tip to PCB adapter PK106 4 4 both from Teledyne LeCroy for accurate measurements of low voltage signals PEM CWT1 ultra mini Rogowski current waveform transducer for measuring the collector current of the IGBT 5 In order to exploit all the benefits of the IEWS20R5135IPB specific electromagnetic compatibility EMC tests can be performed on the evaluation board...

Страница 7: ...apacitance of 270 nF Cres that implements the resonant chain together with the resonant coil Lres A resonant coil with a nominal diameter of 200 mm and a nominal inductance of 100 µH1 The resonant coil must be connected by means of two screw connectors which are indicated on the board as L1 and L2 The value of the utilized inductor will be provided as a reference further on in the document For the...

Страница 8: ...he experimental analysis of the IEWS20R5135IPB operation requires oscilloscope measurements of the collector emitter voltage VCE the voltage at pin INN and the collector current These three measurements allow for a complete understanding of the IEWS20R5135IPB operation and status A more detailed analysis of the IEWS20R5135IPB behavior could require also the measurement of the voltages at the VDET ...

Страница 9: ...cularly tricky as its value is in the range of hundreds of millivolts Therefore the measurements can be affected by the noise generated by the IGBT switching In order to perform reasonable measurements a low inductive connection between CS pin and emitter pin of the IEWS20R5135IPB has to be made A possible solution consists of soldering a header connector and use the ground spring 4 as shown in Fi...

Страница 10: ...and break Normally the best way to avoid damage to the PCB is to use press fit pins for connecting the TO packages and the PCB However such a solution cannot be used in the case of the IEWS20R5135IPB as the additional parasitic inductance caused by the pins would dramatically affect the behavior of the device As a compromise to ease the assembly and disassembly process of the device the mounting h...

Страница 11: ...ng voltage When the VCE exceeds the limiting voltage the IEWS20R5135IPB switches to over voltage shutdown INN voltage is pulled to 0 V In this mode the device can actively clamp the voltage in order to prevent it from exceeding the maximum VCE of the IGBT The over voltage shutdown mode is deactivated as soon as VVDET falls below a restart threshold1 with a minimum blanking time of 3 ms Figure 8a a...

Страница 12: ...over voltage clamping voltage on the value of RVDET c experimental waveforms of VVDET green curve 700 mV div and VCE cyan curve 200 V div time scale 5 µs div may produce a different shift between VVDET and VCE that should therefore be compensated by a higher external capacitance between VDET and GND Application Note 12 of 34 V 1 1 2019 11 25 ...

Страница 13: ... 10 µs div 4 1 3 Tuning turn on detection point of the IGBT One of the critical aspects of the SEPR converter is to determine the optimal turn on point of the IGBT which is during the conduction phase of the parallel diode The evaluation board is already optimized to match the optimal turn on point of the IGBT However in case the resonant capacitance is replaced with a different value the turn on ...

Страница 14: ...r current on the value of the resistance RCS The dependence is not perfectly linear as at higher RCS the effect of the capacitance in parallel becomes more prominent In Figure 9c a comparison is shown between the collector current measured by the Rogowski coil and the voltage measured among CS and emitter pins of the IEWS20R5135IPB It can be noticed that during the on time of the IGBT where the co...

Страница 15: ...tion 4 1 Following the recommendations on page 8 current measurements are made using a Rogowski coil current sensor and voltage probes were connected via PCB adapters No probe has been connected on the CS pin as this can be a significant cause of disturbance for some of the tests explained below Figure 10 shows the evaluation board and the measurement hardware as the main part of the setup AC powe...

Страница 16: ... the display and the system starts the operation In this condition the target output power is 1700 W In case there is no vessel the system returns to stand by mode While in operation the output power of the system can be increased and reduced by means of buttons P and P Table 2 shows the power levels and the corresponding target output power During normal operation conditions the IEWS20R5135IPB is...

Страница 17: ...s condition the high value of the INN voltage changes from 2 5 V to a typical value of 4 V as shown in Figure 13a The MCU continuosly monitors the average value of the INN pin and can therefore detect the status and react consequently In particular in overtemperature warning mode The LED OTW on the board turns on The speed of the fan is increased As soon as the temperature of the device drops agai...

Страница 18: ...ntal results a b Figure 12 Current limitation operation of IEWS20R5135IPB a 100 Hz envelop 2 ms div b single switching event 10 µs div IC yellow curve 20 A div VCE cyan curve 200 V div and INN magenta curve 1V div Application Note 18 of 34 V 1 1 2019 11 25 ...

Страница 19: ...EVAL IH R5IPB A V1 Evaluation board User Guide Experimental results a b Application Note 19 of 34 V 1 1 2019 11 25 ...

Страница 20: ...sts have been performed by using the test generators presented in section 2 2 and the results are addressed in the next sections Before addressing the details of each test it is important to mention that the system is only properly protected by means of the IEWS20R5135IPB which is only guaranteed if the device can sense accurately the collector emitter voltage and the collector current The general...

Страница 21: ...sults Figure 14 Voltage of the bus capacitor of the SEPR during an instantaneous supply voltage interruption 90 V div 5 ms div duration of the interruption 4 ms amplitude of the interruption 40 of the peak nominal value a Application Note 21 of 34 V 1 1 2019 11 25 ...

Страница 22: ...se the peak VCE becomes high enough that it even triggers the over voltage mode of the IEWS20R5135IPB with the consequent shutdown of the device 5 2 2 Surge test Surges may be caused by nearby heavy equipment shutting down or going offline or by lightning strikes to buildings or close to outdoor cables The reference standard for the surge test is the IEC 61000 4 5 which defines the transient shape...

Страница 23: ...age green waveform 200 V div of the SEPR during a 2 kV surge time scale 25 µs div Figure 17 Experimental waveforms of the IEWS20R5135IPB during a 2 kV surge voltage IC yellow waveform 20 A div VCE cyan waveform 200 V div VINN magenta waveform 2 V div and bus voltage green waveform 200 V div time scale 10 µs div Application Note 23 of 34 V 1 1 2019 11 25 ...

Страница 24: ...lector to emitter voltage of the IGBT is also much more significant In this case the single level protection offered by current limitation of the IEWS20R5135IPB may not be enough to avoid an excess increase of the VCE above the maximum permitted limit of the device Therefore the additional protection offered by the over voltage clamping feature IEWS20R5135IPB reveals to be fundamental to properly ...

Страница 25: ...ope of this document However in order to provide a reference for the results which have been presented the details of the resonant coil are shown below Figure 18 depicts a picture of the coil with the dimensions and the distance to the vessel that should be maintained when the latter is placed on the coil Finally Figure 19 depicts the frequency dependence of the series resistance and inductance va...

Страница 26: ...EVAL IH R5IPB A V1 Evaluation board User Guide Appendix 6 2 Schematic drawing Figure 20 Schematic of the board Application Note 26 of 34 V 1 1 2019 11 25 ...

Страница 27: ...EVAL IH R5IPB A V1 Evaluation board User Guide Appendix 6 3 Board layout Figure 21 Layer 1 top layer Application Note 27 of 34 V 1 1 2019 11 25 ...

Страница 28: ...EVAL IH R5IPB A V1 Evaluation board User Guide Appendix Figure 22 Layer 2 bottom layer Application Note 28 of 34 V 1 1 2019 11 25 ...

Страница 29: ...25 Description Value IEWS20R5135IPB Infineon Technologies IEWS20R5135IPB XMC1302 ARM Cortex M0 32 bit MCU Infineon Technologies XMC1302 T038X0200 47pF 16V X7R 10nF 16V X7R 10uF 25V X7R 33nF 16V X7R 100pF 16V X7R 1nF 16V X7R 220nF 16V X7R 3 3nF 16V X7R 10uF 16V X7R 22uF 25V X7R 470nF 25V X7R 100nF 16V X7R EPCOS TDK B32656T7274K KEMET R46KR447050M2K KEMET R463R447000M2M EPCOS TDK B32932A3104K000 Alu...

Страница 30: ... Resistor 100R 250mW 1 Standard Thick Film Chip Resistor 100k 250mW 1 Standard Thick Film Chip Resistor 30k 250mW 1 Standard Thick Film Chip Resistor 4 7k 250mW 1 Standard Thick Film Chip Resistor 47k 250mW 1 Standard Thick Film Chip Resistor 1MEG 250mW 1 Standard Thick Film Chip Resistor 0R 250mW 1 Standard Thick Film Chip Resistor 150R 250mW 1 Standard Thick Film Chip Resistor 1 8k 250mW 1 Stand...

Страница 31: ...O 247 Terminals TE Connectivity AMP TAB 187 FASTON 032 TPBR Heatsink Fischerelektronik SK 481 100 Jumper Wire Hexagonal Spacer Female M3x10mm Hexagonal Spacer Male M3x70mm BRUSHLESS DC FAN Xinruilian XIFAN YD5015MS 18V 0 10A Resonant coil 100µH Fuse 15A Littlefuse 0218015 MRET1P Low Dropout Linear Voltage Regulator Infineon Technologies IFX25401TEV Input filter inductor Toroidal 340µH 15Arms Throu...

Страница 32: ...y com probes probemodel aspx modelid 96 categoryid 3 mseries 434 September 2017 5 PEM CWT1 Ultra Mini Rogowski Current Waveform Transducer http www pemuk com products cwt current probe cwt ultra mini aspx 6 Emtest Compact NX5 Multifunctional test generator for transients EFT Burst Surge Power Fail up to 5 5 kV https www emtest com products product 135120100000013883 php 7 Infineon Technologies AG ...

Страница 33: ...rd User Guide Revision history Revision history Document version Description of changes v1 0 First release Giuseppe De Falco V1 1 BOM update additional minor changes Application Note 33 of 34 V 1 1 2019 11 25 Date of release 15 01 2020 ...

Страница 34: ...or technically trained staff It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with For further information on the product technology delivery terms and conditions and prices please contact your nearest Infineon Technologies office www infineon c...

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