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XTC/3 Operating Manual
4.2.3.5 Option
Figure 4-9 XTC/3M Option Film Programming screen
TIME POWER
. . . . . . . . Yes / No using TOGL key. Default is No.
The
Time-Power
state will only be entered while XTC/3 is in the
DEPOSIT
or
RATE RAMP
state and the film program has been set to complete on
Time-Power
in the event of a failed crystal when there is no backup crystal. If a crystal fail is
detected during the pre-deposit states XTC/3 will not sequence further, causing an
XTC/3
STOP
even if the complete on
Time-Power
(
Yes
) option is selected.
Once in the
Time-Power
state, the source power will remain at the four seconds
average power value of the source control output computed two seconds prior to
the failure. (These times are appropriately modified for PID control.) Thickness is
accumulated at the programmed deposition
RATE
value. The
Time-Power
state
will terminate when the
FINAL THICKNESS
value has been exceeded.
Any post-deposit states will be executed exactly as if a normal deposition had
occurred. When the post-deposit states are complete, XTC/3 will end the layer and
display
STOP
. A
RATE RAMP
cannot be executed in
Time-Power
and that state
is consequently skipped.
DELAY OPTION. . . . . . . . . . . . . . . . None
,
Shutter
,
Control
,
Both
.
Press the
TOGL
key to move through the choices. The default value is
None
for
no delay chosen.
Shutter. . . . . . . . Shutter Delay
state immediately following
Soak Power 2
and preceding
DEPOSIT
. The source shutter relay remains
in its normal state and the sensor shutter relay is active. The
sensor, which must be positioned to sample the source flux
with the source shutter closed, provides closed loop rate
control.
Rate control must be maintained at +/-5% or +/- 0.5 Å/sec,
whichever is greater, of the desired deposition rate for five
seconds before XTC/3 will enter the
DEPOSIT
state,
opening the source shutter and thus exposing the substrate