Rev. 1.10
28
November 04, 2019
Rev. 1.10
29
November 04, 2019
HT45F5Q-3
Battery Charger Flash MCU
HT45F5Q-3
Battery Charger Flash MCU
Bit 1
AC
: Auxiliary flag
0: No auxiliary carry
1: An operation results in a carry out of the low nibbles in addition, or no borrow
from the high nibble into the low nibble in subtraction
Bit 0
C
: Carry flag
0: No carry-out
1: An operation results in a carry during an addition operation or if a borrow does
not take place during a subtraction operation
The “C” flag is also affected by a rotate through carry instruction.
Emulated EEPROM Data Memory
The device contains an Emulated EEPROM Data Memory, which is by its nature a non-volatile
form of re-programmable memory, with data retention even when its power supply is removed.
By incorporating this kind of data memory, a whole new host of application possibilities are made
available to the designer. The availability of the Emulated EEPROM storage allows information
such as product identification numbers, calibration values, specific user data, system setup data or
other product information to be stored directly within the product microcontroller.
Emulated EEPROM Data Memory Structure
The Emulated EEPROM Data Memory capacity is 32×15 bits for the device. The Emulated
EEPROM Erase operation is carried out in a page format while the Write operation is carried out in
4-word format and the Read operation in a word format. The page size is assigned with a capacity of
16 words. Note that the Erase operation should be executed before the Write operation is executed.
Operations
Format
Erase
1 page/time
Write
4 words/time
Read
1 word/time
Note: Page size = 16 words
Emulated EEPROM Erase/Write/Read Format
Erase Page
EAR4
EAR[3:0]
0
0
xxxx
1
1
xxxx
“x”: don’t care
Erase Page Number and Selection
Write Unit
EAR[4:2]
EAR[1:0]
0
000
xx
1
001
xx
2
010
xx
3
011
xx
4
100
xx
5
101
xx
6
110
xx
7
111
xx
“x”: don’t care
Write Unit Number and Selection