Rev. 1.00
12
March 24, 2020
Rev. 1.00
13
March 24, 2020
BS83A04C
4-Key Enhanced Touch I/O Flash MCU
BS83A04C
4-Key Enhanced Touch I/O Flash MCU
Input/Output Characteristics
Ta=-40°C~85°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
DD
Conditions
V
IL
Input Low Voltage for I/O Port or Input Pins
5V
—
0
—
1.5
V
—
0
—
0.2V
DD
V
IH
Input High Voltage for I/O Port or Input Pins
5V
—
3.5
—
5.0
V
—
0.8V
DD
—
V
DD
I
OL
Sink Current for I/O Ports
3V
V
OL
=0.1V
DD
16
32
—
mA
5V
32
65
—
I
OH
Source Current for I/O Ports
3V
V
OH
=0.9V
DD
-4
-8
—
mA
5V
-8
-16
—
R
PH
Pull-high Resistance for I/O Port
(Note)
3V
LVPU=0
20
60
100
kΩ
5V
10
30
50
3V
LVPU=1
6.67 15.00 23.00
5V
3.5
7.5
12.0
I
LEAK
Input Leakage Current
5V V
IN
=V
DD
or V
IN
=V
SS
—
—
±1
μA
t
TCK
TM TCK Input Pin Minimum Pulse Width
—
—
0.3
—
—
μs
t
INT
External Interrupt Minimum Pulse Width
—
—
10
—
—
μs
Note: The R
PH
internal pull high resistance value is calculated by connecting to ground and enabling the input pin
with a pull-high resistor and then measuring the pin current at the specified supply voltage level. Dividing
the voltage by this measured current provides the R
PH
value.
Memory Characteristics
Ta=-40°C~85°C, unless otherwise specified
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V
DD
Conditions
Flash Program Memory / Emulated EEPROM Memory
V
DD
Operating Voltage for Read
—
—
1.8
—
5.5
V
Operating Voltage for Erase/Write – Flash
Program Memory
—
—
3.0
—
5.5
Operating Voltage for Erase/Write –
Emulated EEPROM Memory
—
—
4.5
5.0
5.5
t
DEW
Erase / Write Time – Flash Program Memory 5V Ta=25°C
—
2
3
ms
Erase / Write Cycle Time – Emulated
EEPROM Memory
— EWRTS[1:0]=00B
—
2
3
ms
— EWRTS[1:0]=01B
—
4
6
— EWRTS[1:0]=10B
—
8
12
— EWRTS[1:0]=11B
—
16
24
I
DDPGM
Programming/Erase Current on V
DD
5V
—
—
—
5.0
mA
E
P
Cell Endurance
—
—
10K
—
—
E/W
t
RETD
ROM Data Retention Time
— Ta=25°C
—
40
—
Year
RAM Data Memory
V
DD
Operating Voltage for Read/Write
—
—
V
DDmin
—
V
DDmax
V
V
DR
RAM Data Retention Voltage
— Device in SLEEP Mode
1.0
—
—
V
Note: The Emulated EEPROM erase/write operation can only be executed when the f
SYS
clock frequency is equal
to or greater than 2MHz.