375
Test
Values
Item
Symbol
Condition
Min
Typ
Max
Unit
Notes
Erase
Wait time after SWE
bit setting
x
1
—
—
µs
1
Wait time after ESU
bit setting
y
100
—
—
µs
1
Wait time after E bit
setting
z
10
—
100
ms
1, 6
Wait time after E bit
clear
α
10
—
—
µs
1
Wait time after ESU
bit clear
β
10
—
—
µs
1
Wait time after EV
bit setting
γ
20
—
—
µs
1
Wait time after
dummy write
ε
2
—
—
µs
1
Wait time after EV
bit clear
η
4
—
—
µs
1
Wait time after SWE
bit clear
θ
100
—
—
µs
1
Maximum erase count N
—
—
120
Times
1, 6, 7
Notes: 1. Make the time settings in accordance with the program/erase algorithms.
2. The programming time for 128 bytes. (Indicates the total time for which the P bit in flash
memory control register 1 (FLMCR1) is set. The program-verify time is not included.)
3. The time required to erase one block. (Indicates the time for which the E bit in flash
memory control register 1 (FLMCR1) is set. The erase-verify time is not included.)
4. Programming time maximum value (t
P
(MAX)) = wait time after P bit setting (z)
×
maximum number of writes (N)
5. Set the maximum number of writes (N) according to the actual set values of z1, z2, and
z3, so that it does not exceed the programming time maximum value (t
P
(MAX)). The
wait time after P bit setting (z1, z2) should be changed as follows according to the value
of the number of writes (n).
Number of writes (n)
1
≤
n
≤
6
z1 = 30 µs
7
≤
n
≤
1000
z2 = 200 µs
6. Erase time maximum value (t
E
(max)) = wait time after E bit setting (z)
×
maximum
number of erases (N)
7. Set the maximum number of erases (N) according to the actual set value of (z), so that
it does not exceed the erase time maximum value (t
E
(max)).
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Страница 408: ...392 18 5 Output Load Circuit VCC 2 4 kΩ 12 kΩ 30 pF LSI output pin Figure 18 7 Output Load Condition ...
Страница 457: ...441 DEC VIN CH3 to CH0 A D converter Internal data bus Figure C 17 Port B Block Diagram PB7 to PB0 ...