5 Configuration Mode Introduction
5.2 JTAG Configuration
UG290-2.3E
35(87)
Note!
The condition to erase the second Flash is that FPGA should be in the Wakeup state.
(Done Final of Status Code should be 1.)
4. Send the "0x75" instruction of EFlash Erase;
5. Move the state machine to Shift-DR, and generate a clock of 110ms.
Please refer to Table 5-8 for the frequency requirements. Return to
Run-Test-Idle;
6. Send the "0x3A" instruction of ConfigDisabled;
7. Send the "
0x02” instruction of Noop to end the process.
Process of Programming Internal Flash
The internal Flash uses 256Bytes as an X-page. Each X-page is
divided into 64 Y-pages, and each Y-page contains 4Bytes.
The first Y-page of the first X-page is used to identify whether the
Flash has the capability of Autoboot or Readback, as shown in Table 5-9.
When Readable-pattern is written to the first Y-page, the Flash data can be
read; when the
Autoboot-pattern
is written to the first Y-page, the device
automatically loads the Flash data into the SRAM in the autoboot mode;
The Flash can only be read after the Readable-pattern is written. It cannot
be read in any other cases. Devices with the feature of background
programming just need to use
Autoboot-pattern
.
Autoboot-pattern data must be inserted in the header of bitstream file
in the case of no requirements of reading back data. If an X-page is less
than 256Bytes, you can use 0xFF or 0x00 to complement it.
The requirements for JTAG programming frequency are different
according to the different processes of the embedded Flash in GW1N
series. Please refer to SRAM Erasure Process> Table 5-8 TCK Frequency
Requirements for JTAG.
Table 5-9 Readback-pattern / Autoboot-pattern
Device
Readable
-pattern(4 Bytes) Autoboot-pattern(4 Bytes)
GW1N-1/GW1N-1S
0x07,0x07,0x30,0x40
0x47,0x57,0x31,0x4E
GW1N(R)-2/4
GW1N(R)-2B/4B/9
GW1NZ-1
GW1NS(E)-2(C)
0xF7,0xF7,0x3F,0x4F
The process of programming internal Flash is shown in :
1. Check whether the ID Code matches;
2. Erase the embedded Flash;
3. Verify if the erasure is successful by reading the Status register to
check if the device has been restored to the initial state of the die; the
background programming devices and the GW1NS series of devices
cannot be checked by reading the Status register;
4. Send the "0x15" instruction of ConfigEnable;
5. Write one X-page at a time until the programming is completed;
6. Send the "0x3A" instruction of ConfigDisabled;
7. Send a Reprogram instruction (0x3C) to load the Flash data into the
SRAM;