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GD32A50x User Manual
61
Figure 2-3. Process of word program operation
Set the PG bit
Is the LK bit 0
Perform word write by
DBUS
Start
Yes
No
Unlock the FMC_CTLx
Is the BUSY bit 0
Yes
No
Is the BUSY bit 0
Yes
No
Finish
Note:
Reading the flash should be avoided when a program / erase operation is ongoing in
the same bank.
When programming double word, the ECC byte calculated from the 64 bits will be added
following the 64 bits, then the total 72 bits will be programmed at a time, even if the double
word is 0xFFFF FFFF FFFF FFFF.
If the program / erase operation is interrupted by a power down, reset, ect, the contents in
flash will not be guaranteed and leave in an indeterminate state. So appropriate measures
should be taken to avoid data loss by interrupt of program / erase.
2.3.9.
Main Flash Fast Programming
The FMC provides a fast programming function by DBUS which is used to modify the main
flash memory contents. A row (32 double-word) could be programmed to main flash memory
in this mode to reduce the page programming time by eliminating the need for verifying the
flash locations before they are programmed and to avoid rising and falling time of high voltage
for each word
.
The following steps show the register access sequence of the programming operation.