MB95630H Series
MN702-00009-1v0-E
FUJITSU SEMICONDUCTOR LIMITED
551
CHAPTER 25 DUAL OPERATION FLASH MEMORY
25.5 Programming/Erasing Flash Memory
Figure 25.5-2 Sample Procedure for Erasing Data from Sectors in Flash Memory
S
t
a
rt of er
as
ing
Re
a
d intern
a
l
a
ddre
ss
.
Re
a
d intern
a
l
a
ddre
ss
.
Re
a
d intern
a
l
a
ddre
ss
.
Re
a
d intern
a
l
a
ddre
ss
2.
Re
a
d intern
a
l
a
ddre
ss
1.
Er
as
e
a
ny other
s
ector
s
?
Exec
u
tion timeo
u
t
(DQ5)
End of er
as
ing
Er
as
e error
(6) Inp
u
t code (0x
3
0) to
er
as
e
s
ector.
F
S
R:WRE
En
ab
le Fl
as
h memory er
as
ing.
F
S
R:WRE
Di
sab
le Fl
as
h memory er
as
ing.
S
WRE0
En
ab
le/di
sab
le progr
a
mming d
a
t
a
to
a
s
ector.
(Write "0" to di
sab
le progr
a
mming d
a
t
a
or “1” to en
ab
le
progr
a
mming d
a
t
a
to
a
s
ector.)
Er
as
e comm
a
nd
s
e
qu
ence
(1) 0xUAAA
←
0xAA
(2) 0x
U554
←
0x55
(
3
) 0x
UAAA
←
0x
8
0
(4) 0xUAAA
←
0xAA
(5) 0xU554
←
0x55
1
0
DQ
3
1
0
Toggle
b
it (DQ6)
D
a
t
a
1 = D
a
t
a
2
Toggle
b
it (DQ6)
D
a
t
a
1 = D
a
t
a
2
NO
NO
NO
NO
YE
S
YE
S
YE
S
YE
S
Er
as
e
s
pecific
a
tion h
as
not
b
een
a
dded within
3
5
μ
s
.
S
et rem
a
inder re-exec
u
tion
fl
a
g,
a
nd termin
a
te
er
as
e once
Rem
a
inder
re-exec
u
tion fl
a
g?
Содержание MB95630H Series
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