130nm node CMOS Process (CS90A)
Al
5-Cu
6-Cu
7-Cu
1-Cu
2-Cu
3-Cu
4-Cu
SiLK
SiO2
Al
Global Metal:
AL (Fuse & Pad)
Pitch: 1.8
µ
m
Semi Global Metal:
Thick Cu + SiO2
Pitch: 0.6
µ
m
Intermediate Metal:
Thin Cu + SiLK
Pitch: 0.4
µ
m
SRAM
Transistor
Interconnect
©2003 Fujitsu Microelectronics America, Inc.
All company and product names are trademarks or
registered trademarks of their respective owners.
Printed in the U.S.A. WFS-FS-20983-7/2003
FUJITSU MICROELECTRONICS AMERICA, INC.
Corporate Headquarters
1250 E. Arques Ave. Sunnyvale, CA 94088-3470
Tel: (800) 866-8608 Fax: (408) 737-5999
E-mail: [email protected] Web Site: http://www.fma.fujitsu.com
Cell Size =
1.98µm
2
(1.2µm x 1.65µm)
(2nd Generation SRAM)
1.65
µ
m
