MB95630H Series
MN702-00009-2v0-E
FUJITSU SEMICONDUCTOR LIMITED
555
CHAPTER 26 DUAL OPERATION FLASH MEMORY
26.5 Programming/Erasing Flash Memory
Figure 26.5-2 Sample Procedure for Erasing Data from Sectors in Flash Memory
Start of erasing
Read internal address.
Read internal address.
Read internal address.
Read internal address 2.
Read internal address 1.
Erase any other
sectors?
Execution timeout
(DQ5)
End of erasing
Erase error
(6) Input code (0x30) to
erase sector.
FSR:WRE
Enable Flash memory erasing.
FSR:WRE
Disable Flash memory erasing.
SWRE0
Enable/disable programming data to a sector.
(Write "0" to disable programming data or “1” to enable
programming data to a sector.)
Erase command sequence
(1) 0xUAAA
←
0xAA
(2) 0x
U554
←
0x55
(3) 0x
UAAA
←
0x80
(4) 0xUAAA
←
0xAA
(5) 0xU554
←
0x55
1
0
DQ3
1
0
Toggle bit (DQ6)
Data 1 = Data 2
Toggle bit (DQ6)
Data 1 = Data 2
NO
NO
NO
NO
YES
YES
YES
YES
Erase specification has not
been added within 35
μ
s.
Set remainder re-execution
flag, and terminate
erase once
Remainder
re-execution flag?
Содержание 8FX
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